Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy

Materials Science and Engineering B ◽

10.1016/j.mseb.2005.09.005 ◽

2006 ◽

Vol 126 (1) ◽

pp. 86-92 ◽

Author(s):

Y. Kajikawa ◽

N. Kobayashi ◽

H. Terasaki

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Structures

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Low-temperature molecular beam epitaxy of Si1−x−yGexCy/Si quantum well structures: electrical and optical properties

Thin Solid Films ◽

10.1016/s0040-6090(98)00438-6 ◽

1998 ◽

Vol 321 (1-2) ◽

pp. 26-32 ◽

Author(s):

D Grützmacher ◽

R Hartmann ◽

P Schnappauf ◽

U Gennser ◽

E Müller ◽

...

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Well ◽

Molecular Beam ◽

Electrical And Optical Properties ◽

Quantum Well Structures

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Strain-enhanced arsenic precipitation in GaAs-based quantum-well structures grown by low-temperature molecular beam epitaxy

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/18/15/031 ◽

2006 ◽

Vol 18 (15) ◽

pp. 3897-3903 ◽

Author(s):

J H Huang ◽

W N Lee ◽

X J Kuo ◽

Y O Su

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Structures

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Molecular beam epitaxy of ZnCdSe/ZnSe strained quantum-well structures on GaAs(1 1 1)A substrates and piezoelectric properties

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00726-4 ◽

1998 ◽

Vol 184-185 (1-2) ◽

pp. 723-727

Author(s):

N Matsumura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Piezoelectric Properties ◽

Quantum Well Structures ◽

Strained Quantum Well

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InGaAs/AlGaAs strained quantum well laser with semi‐insulating low temperature GaAs and lateraln‐p‐ncurrent confinement structures grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.108260 ◽

1992 ◽

Vol 61 (19) ◽

pp. 2266-2268 ◽

Author(s):

T. Takamori ◽

Y. K. Sin ◽

K. Watanabe ◽

T. Kamijoh

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Laser ◽

Strained Quantum Well ◽

Low Temperature Gaas

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Raman scattering from GaAs/AlGaAs multiple quantum well structures grown by two-step molecular beam epitaxy

Current Applied Physics ◽

10.1016/j.cap.2016.12.023 ◽

2017 ◽

Vol 17 (3) ◽

pp. 398-402 ◽

Author(s):

Taegeon Lee ◽

Heesuk Rho ◽

Jin Dong Song ◽

Won Jun Choi

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Raman Scattering ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures

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GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.96178 ◽

1985 ◽

Vol 47 (4) ◽

pp. 394-396 ◽

Author(s):

H. Temkin ◽

M. B. Panish ◽

P. M. Petroff ◽

R. A. Hamm ◽

J. M. Vandenberg ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Structures ◽

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Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates

Applied Physics Letters ◽

10.1063/1.96665 ◽

1986 ◽

Vol 48 (14) ◽

pp. 940-942 ◽

Author(s):

R. K. Tsui ◽

G. D. Kramer ◽

J. A. Curless ◽

M. S. Peffley

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Structures

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TEM study of quaternary InGaAsN/GaAs quantum well structures grown by molecular beam epitaxy

EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany ◽

10.1007/978-3-540-85226-1_42 ◽

2008 ◽

pp. 83-84

Author(s):

T. Remmele ◽

M. Albrecht ◽

I. Häusler ◽

L. Geelhaar ◽

H. Riechert ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Structures

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Strain-compensations for interfacial strain and average strain in InGaAs/InAIP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy

Control of Semiconductor Interfaces ◽

10.1016/b978-0-444-81889-8.50016-x ◽

1994 ◽

pp. 69-73

Author(s):

K. Naniwae ◽

S. Sugou ◽

T. Anan

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Average Strain ◽

Quantum Well Structures ◽

Interfacial Strain

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Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

Applied Physics Letters ◽

10.1063/1.3373834 ◽

2010 ◽

Vol 96 (14) ◽

pp. 141112 ◽

Author(s):

V. N. Jmerik ◽

A. M. Mizerov ◽

A. A. Sitnikova ◽

P. S. Kop’ev ◽

S. V. Ivanov ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures ◽

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