Time resolved reflectivity measurements of silicon solid phase epitaxial regrowth

ABSTRACTThe rate of solid-phase epitaxial regrowth has been studied using time-resolved reflectivity in three different types of SiGe/Si epilayers amorphized by ion implantation. In two of these cases, the alloy epilayer contained either 12% or 20% Ge, and the amorphization depth was greater than the thickness (2000 Å) of the SiGe alloy layer. Time-resolved reflectivity measurements showed that the rate of regrowth was not constant in these two cases, but first decreased after passing the SiGe/Si interface, and then increased. The minimum regrowth rate occurred closer to the SiGe/Si interface in the epilayers with the larger Ge atomic fraction. In the third type of sample, the alloy epilayer thickness was ∼7μm, so that the initial epilayer (15% Ge) had the lattice constant of the bulk alloy. Furthermore, amorphization and regrowth occurred entirely within the relaxed alloy layer. In this case, the regrowth rate was constant. The composition dependence of the regrowth-rate transient in the strained layers is discussed in the context of a ‘critical-thickness’ model of strain relaxation.

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Kinetics of solid phase epitaxial regrowth in amorphized Si0.88Ge0.12measured by time‐resolved reflectivity

Applied Physics Letters ◽

10.1063/1.108892 ◽

1993 ◽

Vol 62 (5) ◽

pp. 501-503 ◽

Cited By ~ 44

Author(s):

C. Lee ◽

T. E. Haynes ◽

K. S. Jones

Keyword(s):

Solid Phase ◽

Time Resolved ◽

Epitaxial Regrowth ◽

Kinetics Of

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High-Quality Boron and BF2+-Implanted P+ Junctions in Si Using Solid Phase Epitaxy and Transient Annealing

MRS Proceedings ◽

10.1557/proc-35-367 ◽

1984 ◽

Vol 35 ◽

Cited By ~ 6

Author(s):

P.K. Vasudev ◽

A.E. Schmitz ◽

G.L. Olson

Keyword(s):

Solid Phase ◽

Solid Phase Epitaxy ◽

Impurity Effects ◽

Solid Phase Crystallization ◽

High Quality ◽

Time Resolved ◽

Boron Doped ◽

Epitaxial Regrowth ◽

Doping Profiles

ABSTRACTWe report on a systematic study of the doping profiles resulting from rapid thermal annealing of boron and BF2+-implanted silicon samples that were preamorphized by Si+ implantation. A two-step process consisting of an initial solid phase epitaxial regrowth followed by a brief (~5 sec) high temperature (1050ଌ) anneal produces extremely shallow (<1500Å) junctions with low defect concentrations. The quality of the epitaxial regrowth is very sensitive to implant conditions and impurity effects as deduced from time-resolved reflectivity measurements. Using the best conditions for implantation and solid phase crystallization, we have obtained boron-doped regions with sheet resistivities of 40 Ω/ and BF2-doped regions of resistivity 60 Ω/.

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The Effects of Rapid Recrystallization and Ion Implanted Carbon on The Solid Phase Epitaxial Regrowth of Si1−xGex Alloy Layers On Silicon

MRS Proceedings ◽

10.1557/proc-379-453 ◽

1995 ◽

Vol 379 ◽

Author(s):

M.J. Antonell ◽

T.E. Haynes ◽

K.S. Jones

Keyword(s):

Elevated Temperatures ◽

Defect Formation ◽

Solid Phase ◽

Growth Front ◽

Threading Dislocation ◽

Time Resolved ◽

Ion Channeling ◽

Epitaxial Regrowth ◽

Transmission Electron ◽

Threading Dislocation Density

ABSTRACTTransmission electron microscopy has been combined with time-resolved reflectivity and ion channeling to study the effects of regrowth temperature and carbon introduction by ion implantation on the solid phase epitaxial regrowth (SPER) of strained 2000Å, Sio.88Ge0.12/Si alloy films grown by molecular-beam epitaxy (MBE). Relative to the undoped layers, carbon incorporation in the MBE grown SiGe layers prior to regrowth at moderate temperatures (500- 700°C) has three main effects on SPER; these include a reduction in SPER rate, a delay in the onset of strain-relieving defect formation, and a sharpening of the amorphous-crystalline (a/c) interface, i.e., promotion of a two-dimensional (planar) growth front.1 Recrystallization of amorphized SiGe layers at higher temperatures (1 100°C) substantially modifies the defect structure in samples both with and without carbon. At these elevated temperatures threading dislocations extend completely to the Si/SiGe interface. Stacking faults are eliminated in the high temperature regrowth, and the threading dislocation density is slightly higher with carbon implantation.

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Performance of (110) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

Microelectronic Engineering ◽

10.1016/j.mee.2011.03.111 ◽

2011 ◽

Vol 88 (7) ◽

pp. 1265-1268

Author(s):

A. Ohata ◽

Y. Bae ◽

T. Signamarcheix ◽

J. Widiez ◽

B. Ghyselen ◽

...

Keyword(s):

Solid Phase ◽

Epitaxial Regrowth

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Solid phase epitaxial regrowth of Si1−xGex/Si strained‐layer structures amorphized by ion implantation

Applied Physics Letters ◽

10.1063/1.100828 ◽

1989 ◽

Vol 54 (1) ◽

pp. 42-44 ◽

Cited By ~ 51

Author(s):

B. T. Chilton ◽

B. J. Robinson ◽

D. A. Thompson ◽

T. E. Jackman ◽

J.‐M. Baribeau

Keyword(s):

Ion Implantation ◽

Solid Phase ◽

Strained Layer ◽

Epitaxial Regrowth ◽

Layer Structures

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USJ formation using solid phase epitaxial regrowth and femtosencond laser anneal

10.1063/1.4766506 ◽

2012 ◽

Author(s):

Tzu-Lang Shih ◽

Sheng-Wen Chen ◽

Chang-Peng Wu ◽

Chung-Wei Cheng ◽

Chih-Wei Chien ◽

...

Keyword(s):

Solid Phase ◽

Epitaxial Regrowth ◽

Laser Anneal

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Detection of Oligonucleotide Hybridization on a Single Microparticle by Time-Resolved Fluorometry: Hybridization Assays on Polymer Particles Obtained by Direct Solid Phase Assembly of the Oligonucleotide Probes

Bioconjugate Chemistry ◽

10.1021/bc970033c ◽

1997 ◽

Vol 8 (3) ◽

pp. 378-384 ◽

Cited By ~ 23

Author(s):

Harri Hakala ◽

Pia Heinonen ◽

Antti Iitiä ◽

Harri Lönnberg

Keyword(s):

Solid Phase ◽

Oligonucleotide Probes ◽

Polymer Particles ◽

Time Resolved ◽

Oligonucleotide Hybridization ◽

Direct Solid ◽

Hybridization Assays

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Solute Segregation and Dynamics of Solid-Phase Crystallization In in and Sb-Implanted Silicon

MRS Proceedings ◽

10.1557/proc-4-183 ◽

1981 ◽

Vol 4 ◽

Cited By ~ 3

Author(s):

J. Narayan ◽

G. L. Olson ◽

O. W. Holland

Keyword(s):

Laser Power ◽

Solid Phase ◽

Solute Segregation ◽

Dislocation Loops ◽

Solid Phase Crystallization ◽

Time Resolved ◽

Plan View ◽

Ion Channeling ◽

Retrograde Solubility ◽

Transmission Electron

ABSTRACTTime-resolved-reflectivity measurements have been combined with transmission electron microscopy (cross-section and plan-view), Rutherford backscattering and ion channeling techniques to study the details of laser induced solid phase epitaxial growth in In+ and Sb+ implanted silicon in the temperature range from 725 to 1500 °K. The details of microstructures including the formation of polycrystals, precipitates, and dislocations have been correlated with the dynamics of crystallization. There were limits to the dopant concentrations which could be incorporated into substitutional lattice sites; these concentrations exceeded retrograde solubility limits by factors up to 70 in the case of the Si-In system. The coarsening of dislocation loops and the formation of a/2<110>, 90° dislocations in the underlying dislocation-loop bands are described as a function of laser power.

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