The Effects of Rapid Recrystallization and Ion Implanted Carbon on The Solid Phase Epitaxial Regrowth of Si1−xGex Alloy Layers On Silicon

1995 ◽  
Vol 379 ◽  
Author(s):  
M.J. Antonell ◽  
T.E. Haynes ◽  
K.S. Jones
Keyword(s):  
Elevated Temperatures ◽  
Defect Formation ◽  
Solid Phase ◽  
Growth Front ◽  
Threading Dislocation ◽  
Time Resolved ◽  
Ion Channeling ◽  
Epitaxial Regrowth ◽  
Transmission Electron ◽  
Threading Dislocation Density

ABSTRACTTransmission electron microscopy has been combined with time-resolved reflectivity and ion channeling to study the effects of regrowth temperature and carbon introduction by ion implantation on the solid phase epitaxial regrowth (SPER) of strained 2000Å, Sio.88Ge0.12/Si alloy films grown by molecular-beam epitaxy (MBE). Relative to the undoped layers, carbon incorporation in the MBE grown SiGe layers prior to regrowth at moderate temperatures (500- 700°C) has three main effects on SPER; these include a reduction in SPER rate, a delay in the onset of strain-relieving defect formation, and a sharpening of the amorphous-crystalline (a/c) interface, i.e., promotion of a two-dimensional (planar) growth front.1 Recrystallization of amorphized SiGe layers at higher temperatures (1 100°C) substantially modifies the defect structure in samples both with and without carbon. At these elevated temperatures threading dislocations extend completely to the Si/SiGe interface. Stacking faults are eliminated in the high temperature regrowth, and the threading dislocation density is slightly higher with carbon implantation.

Solute Segregation and Dynamics of Solid-Phase Crystallization In in and Sb-Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan ◽  
G. L. Olson ◽  
O. W. Holland
Keyword(s):  
Laser Power ◽  
Solid Phase ◽  
Solute Segregation ◽  
Dislocation Loops ◽  
Solid Phase Crystallization ◽  
Time Resolved ◽  
Plan View ◽  
Ion Channeling ◽  
Retrograde Solubility ◽  
Transmission Electron

ABSTRACTTime-resolved-reflectivity measurements have been combined with transmission electron microscopy (cross-section and plan-view), Rutherford backscattering and ion channeling techniques to study the details of laser induced solid phase epitaxial growth in In+ and Sb+ implanted silicon in the temperature range from 725 to 1500 °K. The details of microstructures including the formation of polycrystals, precipitates, and dislocations have been correlated with the dynamics of crystallization. There were limits to the dopant concentrations which could be incorporated into substitutional lattice sites; these concentrations exceeded retrograde solubility limits by factors up to 70 in the case of the Si-In system. The coarsening of dislocation loops and the formation of a/2<110>, 90° dislocations in the underlying dislocation-loop bands are described as a function of laser power.

Synthesis of Dislocation Free Siy(SnxC1−x)1−y Alloys by Molecular Beam Deposition and Solid Phase Epitaxy

1993 ◽  
Vol 298 ◽  
Author(s):  
Gang He ◽  
Mark D. Savellano ◽  
Harry A. Atwater
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Pure Silicon ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Molecular Beam Deposition ◽  
Beam Deposition

AbstractSynthesis of strain-compensated single-crystal Siy(SnxC1-x)1-y alloy films on silicon (100) substrates has been achieved with compositions of tin and carbon greatly exceeding their normal equilibrium solubility in silicon. Amorphous SiSnC alloys were deposited by molecular beam deposition from solid sources followed by thermal annealing. In situ monitoring of crystallization was done using time-resolved reflectivity. Good solid phase epitaxy was observed for Si0.98Sn0.01C0.01, at a rate about 20 times slower than that of pure silicon. Compositional and structural analysis was done using Rutherford backscattering, electron microprobe, ion channeling, x-ray diffraction, and transmission electron microscopy.

Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation

2001 ◽  
Vol 16 (11) ◽  
pp. 3229-3237 ◽  
Author(s):  
A. C. Y. Liu ◽  
J. C. McCallum ◽  
J. Wong-Leung
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Elevated Temperatures ◽  
Defect Formation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Plan View ◽  
Atomic Force ◽  
Transmission Electron

Solid-phase epitaxy was examined in deep amorphous volumes formed in silicon wafers by multi-energy self-implantation through a mask. Crystallization was effected at elevated temperatures with the amorphous volume being transformed at both lateral and vertical interfaces. Sample topology was mapped using an atomic force microscope. Details of the process were clarified with both plan-view and cross-sectional transmission electron microscopy analyses. Crystallization of the amorphous volumes resulted in the incorporation of a surprisingly large number of dislocations. These arose from a variety of sources. Some of the secondary structures were identified to occur uniquely from the crystallization of volumes in this particular geometry.

Defect Reduction in GaAs Grown on Si by Using Saw-Tooth-Patterned Substrates

1992 ◽  
Vol 281 ◽  
Author(s):  
Jane G. Zhu ◽  
M. M. Al-Jassim ◽  
N. H. Karam ◽  
K. M. Jones
Keyword(s):  
Dislocation Density ◽  
Chemical Vapor ◽  
Growth Front ◽  
Organic Chemical ◽  
Threading Dislocation ◽  
Defect Reduction ◽  
Dislocation Configuration ◽  
Si Substrates ◽  
Transmission Electron ◽  
Threading Dislocation Density

ABSTRACTEpitaxial GaAs layers have been grown on saw-tooth-patterned (STP) Si substrates by metal-organic chemical vapor deposition and analyzed by transmission electron microscopy. The utilization of this special interface feature is effective in suppressing the formation of antiphase boundaries and reducing the threading dislocation density. The growth of GaAs has been studied with the epilayer thicknesses ranging from several hundred angstroms to several microns. Very flat growth front on (100) plane above the STP region is observed. The dislocation density decreases very rapidly in the area farther away from the interface. The dislocation configuration at this STP interface is very different from that at the extensively studied two-dimensional planar interface.

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy

2008 ◽  
Vol 600-603 ◽  
pp. 267-272 ◽  
Author(s):  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Masahiro Nagano
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Formation ◽  
Grazing Incidence ◽  
Microscopic Structure ◽  
Threading Dislocation ◽  
Simultaneous Generation ◽  
Burgers Vector ◽  
X Ray ◽  
Transmission Electron

Defect formation in 4H-SiC(0001) and (000-1) epitaxy is investigated by grazing incidence synchrotron reflection X-ray topography and transmission electron microscopy. Frank-type faults, which are terminated by four Frank partials with a 1/4[0001] type Burgers vector with the same sign on four different basal planes, are confirmed to be formed by conversion of a 1c threading edge dislocation (TSD) in the substrate as well as simultaneous generation of a 1c TSD during epitaxy. The collation between the topography appearance and the microscopic structure and the variety of Frank faults are shown. Formation of carrot defects and threading dislocation clusters are also investigated.

Defect Reduction in Cd1-xZnxTe Epilayers on GaAs Substrates

1994 ◽  
Vol 299 ◽  
Author(s):  
Saket Chadda ◽  
Kevin Malloy ◽  
John Reno
Keyword(s):  
Threading Dislocation ◽  
Full Width ◽  
X Ray Diffraction ◽  
Defect Reduction ◽  
X Ray ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Threading Dislocation Density ◽  
Optimum Period ◽  
Bulk Alloys

AbstractCd0.91Zn0.09Te/CdTe multilayers of various period thicknesses were inserted into Cd0.955Zn0.045Te bulk alloys grown on (001) GaAs. The net strain of the multilayer on the underlying Cd0.955Zn0.045Te was designed to be zero. X-ray diffraction full width at half maximum (FWHM) was used as a means to optimize the period thickness of the multilayer. Transmission electron microscopy of the optimum period thickness samples demonstrated four orders of magnitude decrease in the threading dislocation density. Mechanism of bending by equi-strained multilayers is discussed.

Time-Resolved Reflectivity Study of Solid-Phase Epitaxial Regrowth in Relaxed and Strained Si1−xGex Epilayers

1992 ◽  
Vol 281 ◽  
Author(s):  
T. E. Haynes ◽  
C. Lee ◽  
K. S. Jones
Keyword(s):  
Composition Dependence ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Alloy Layer ◽  
Atomic Fraction ◽  
Bulk Alloy ◽  
Strained Layers ◽  
Time Resolved ◽  
Epitaxial Regrowth ◽  
Different Types

ABSTRACTThe rate of solid-phase epitaxial regrowth has been studied using time-resolved reflectivity in three different types of SiGe/Si epilayers amorphized by ion implantation. In two of these cases, the alloy epilayer contained either 12% or 20% Ge, and the amorphization depth was greater than the thickness (2000 Å) of the SiGe alloy layer. Time-resolved reflectivity measurements showed that the rate of regrowth was not constant in these two cases, but first decreased after passing the SiGe/Si interface, and then increased. The minimum regrowth rate occurred closer to the SiGe/Si interface in the epilayers with the larger Ge atomic fraction. In the third type of sample, the alloy epilayer thickness was ∼7μm, so that the initial epilayer (15% Ge) had the lattice constant of the bulk alloy. Furthermore, amorphization and regrowth occurred entirely within the relaxed alloy layer. In this case, the regrowth rate was constant. The composition dependence of the regrowth-rate transient in the strained layers is discussed in the context of a ‘critical-thickness’ model of strain relaxation.

The Influence of Dopant Type on Polysilicon Grain Growth and Solid Phase Epitaxial Regrowth

1997 ◽  
Vol 3 (S2) ◽  
pp. 477-478
Author(s):  
M.G. Shlepr ◽  
G.A. Schrantz ◽  
A.L. Rivoli ◽  
G. Bajor
Keyword(s):  
Grain Growth ◽  
Solid Phase ◽  
Convergent Beam Electron Diffraction ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Process Technology ◽  
Epitaxial Regrowth ◽  
Transmission Electron ◽  
Polysilicon Emitters ◽  
Convergent Beam

A recent process technology to manufacture bipolar junction transistors utilizes polysilicon emitters. Polysilicon is deposited, appropriately doped to form both NPN and PNP transistors, and exposed to temperatures that result in grain growth. Since polysilicon is in contact with Si( 100) at the emitter, base, and collector (Fig. 1), solid phase epitaxial regrowth might also occur. Production runs with this structure occasionally produce transistors with low current gain. High and low gain NPN and PNP transistors were characterized by transmission electron microscopy.Vertical sections through NPN/PNP transistor arrays were made by the wedge technique, low-angle ion milled to electron-transparency, and viewed at 200 KV. The grain size of the polysilicon on oxide was recorded and estimated. The extent of epitaxial regrowth was quantified for each of the Si (100) contact areas. Convergent Beam Electron Diffraction (CBED) was used to confirm the orientation of the presumed regrown polysilicon.

MO-CVD GaAs Grown by Direct Deposition on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
S. M. Vernon ◽  
S. J. Pearton ◽  
J. M. Gibson ◽  
R. Caruso ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Gaas Layer ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Activation Data ◽  
Threading Dislocation Density ◽  
Donor Activity

ABSTRACTGaAs layers were grown directly on misoriented (2° off (100)→[011]) Si substrates by Metalorganic Chemical Vapor Deposition. The threading dislocation density at the surface of 4 μm thick layers was typically 108cm−2, as determined by both preferential etching and transmission electron microscopy. Rapid thermal annealing (900°C, 10s) improved the crystalline quality of the GaAs near the heterointerface while allowing no detectable Si diffusion into this layer. Two deep electron traps were observed in the undoped GaAs, but were present at a low concentration (∼ 1013 cm−3 ). The (400) x-ray diffraction peak width from the GaAs was significantly reduced with increasing GaAs layer thickness, indicating improved material quality. This is supported by Si implant activation data, which shows higher net donor activity in thicker layers.

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