Structural characterization of high-dose C++N+ ion-implanted (111) Si

2001 ◽  
Vol 184 (3) ◽  
pp. 361-370 ◽  
Author(s):  
L. Barbadillo ◽  
M.J. Hernández ◽  
M. Cervera ◽  
P. Rodrı́guez ◽  
J. Piqueras ◽  
...  
Keyword(s):  
Structural Characterization ◽  
High Dose ◽  
Ion Implanted

Electrical and structural characterization of ion implanted GaN

2009 ◽  
Vol 267 (8-9) ◽  
pp. 1561-1563 ◽  
Author(s):  
M. Usman ◽  
A. Nazir ◽  
T. Aggerstam ◽  
M.K. Linnarsson ◽  
A. Hallén
Keyword(s):  
Structural Characterization ◽  
Ion Implanted

Structural Characterization of Dynamic Annealing Effects of P+ Implanted SI

1985 ◽  
Vol 45 ◽  
Author(s):  
Marina Berti ◽  
A.V. Drigo ◽  
E. Gabilli ◽  
R. Lotti ◽  
G. Lulli ◽  
...  
Keyword(s):  
Transition Temperature ◽  
Dose Rate ◽  
Structural Characterization ◽  
Ion Bombardment ◽  
High Dose Rate ◽  
High Dose ◽  
Temperature Range ◽  
Annealing Effects ◽  
Increasing Temperature

ABSTRACTSome renarks about the mechanism for dynamic annealing during high dose rate P implantation of Si are reported. TEM observations and RBS channeling measurements show that the ion bombardment enhances the amorphous to crystalline transformation in the temperature range 200 ≤ T ≤ 600°C. It is found that the ratio between the observed recrystalli-zation velocity and the thermal SPE velocity decreases with increasing temperature. This indicates that a transition temperature must exist between the ion-assisted recrystallization regime and the ?lermal SPE regime. For the energy (100 keV) and the dose rate (60,uA/cm2) used in our experiments the transition temperature is about 700°C.

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