Observation of latent heavy-ion tracks in polyimide by means of transmission electron microscopy

1999 ◽  
Vol 156 (1-4) ◽  
pp. 183-190 ◽  
Author(s):  
Yehuda Eyal ◽  
Khatib Gassan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Heavy Ion ◽  
Ion Tracks ◽  
Transmission Electron ◽  
Means Of Transmission

Multi-scale Investigation of Heterogeneous Swift Heavy Ion Tracks in Stannate Pyrochlore

2021 ◽  
Author(s):  
Eric O'Quinn ◽  
Cameron Tracy ◽  
William F. Cureton ◽  
Ritesh Sachan ◽  
Joerg C. Neuefeind ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Heavy Ion ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural Modifications ◽  
Multi Scale ◽  
Ion Tracks ◽  
Swift Heavy Ion ◽  
Transmission Electron

Er2Sn2O7 pyrochlore was irradiated with swift heavy Au ions (2.2 GeV), and the induced structural modifications were systematically examined using complementary characterization techniques including transmission electron microscopy (TEM), X-ray diffraction...

Characterization of swift heavy ion tracks in MoS2 by transmission electron microscopy

2020 ◽  
Vol 29 (10) ◽  
pp. 106103
Author(s):  
Li-Jun Xu ◽  
Peng-Fei Zhai ◽  
Sheng-Xia Zhang ◽  
Jian Zeng ◽  
Pei-Pei Hu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Heavy Ion ◽  
Ion Tracks ◽  
Swift Heavy Ion ◽  
Transmission Electron

Structural Properties of Amorphous Silicon Produced by Electron Irradiation

1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yamasaki ◽  
S. Takeda
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Distribution Function ◽  
Structural Properties ◽  
Electron Irradiation ◽  
Low Temperatures ◽  
Crystalline Silicon ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Means Of Transmission

AbstractThe structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550°C.

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