Structural Properties of Amorphous Silicon Produced by Electron Irradiation

1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yamasaki ◽  
S. Takeda
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Distribution Function ◽  
Structural Properties ◽  
Electron Irradiation ◽  
Low Temperatures ◽  
Crystalline Silicon ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Means Of Transmission

AbstractThe structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550°C.

Structural properties of the thermoelectric material CuCrS2 and of deintercalated CuxCrS2 on different length scales: X-ray diffraction, pair distribution function and transmission electron microscopy studies

2017 ◽  
Vol 5 (36) ◽  
pp. 9331-9338 ◽  
Author(s):  
Anna-Lena Hansen ◽  
Torben Dankwort ◽  
Hendrik Groß ◽  
Martin Etter ◽  
Jan König ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Distribution Function ◽  
Structural Properties ◽  
Thermoelectric Materials ◽  
Pair Distribution Function ◽  
X Ray Diffraction ◽  
Length Scales ◽  
X Ray ◽  
Transmission Electron

Structural properties of the thermoelectric materials CuCrS2 and CuxCrS2 on different length scales.

Amorphization phenomenon in Ni/amorphous Si multilayers

1994 ◽  
Vol 9 (2) ◽  
pp. 401-405 ◽  
Author(s):  
W.H. Wang ◽  
W.K. Wang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Amorphous Structure ◽  
Cross Sectional ◽  
Modulation Period ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Means Of Transmission ◽  
State Amorphization

Interfacial reactions of Ni/amorphous Si(a-Si) multilayers are studied by means of transmission electron microscopy (TEM) and cross-sectional transmission electron microscopy (XTEM). Transformation from a crystalline to an amorphous structure has been observed in as-deposited Ni/a-Si multilayers with small modulation periods. This phenomenon is suggested to be due to interdiffusion-induced solid state amorphization which is facilitated by the high density of interface in the shorter modulation period multilayers. A thermodynamic and kinetic explanation is given for this phenomenon.

Structural characterization of amorphous ceramics in the system Si–B–N–(C) by means of transmission electron microscopy methods

1999 ◽  
Vol 14 (9) ◽  
pp. 3746-3753 ◽  
Author(s):  
D. Heinemann ◽  
W. Assenmacher ◽  
W. Mader ◽  
M. Kroschel ◽  
M. Jansen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Distribution Function ◽  
Pair Distribution Function ◽  
Homogeneous Distribution ◽  
Molecular Precursors ◽  
Energy Filtering ◽  
Transmission Electron ◽  
Fiber Materials ◽  
Means Of Transmission

Amorphous ceramics with the chemical composition Si3B3N7 and SiBN3C were produced from single-source molecular precursors by polymerization and pyrolysis. The powder and fiber materials were investigated by means of energy filtering transmission electron microscopy. The intensity of elastically scattered electrons is recorded to calculate the pair distribution function of these ceramics. In the pair distribution function of Si3B3N7 three significant maxima at 0.144, 0.172, and 0.291 nm are clearly resolved and are assigned to the pair distances B–N, Si–N, and Si–Si (N–N), respectively, by comparison to crystalline materials. The predominant structural units of the ceramic are trigonal planar BN3 and tetrahedral SiN4 groups, which are close to their regular symmetry. The overall pair distribution function of SiBN3C is very similar to that of Si3B3N7; however, the maxima are broadened due to the incorporation of carbon into the network. High-resolution mapping of the elements Si, B, N, and C with electron spectroscopic imaging reveals a homogeneous distribution on a subnanometer scale without precipitation or separation of, for example, carbon-rich clusters. Similarly, elemental mapping of Si3B3N7 reveals a random distribution of the elements Si, B, and N at the same scale. Both new ceramics consist of an amorphous network with bonds and coordinations as preformed in the precursor.

Vertical self-organization of Ge1−xMnx nanocolumn multilayers grown on Ge(001) substrates

2016 ◽  
Vol 30 (20) ◽  
pp. 1650269 ◽  
Author(s):  
Thi Giang Le ◽  
Minh Tuan Dau
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Elastic Constant ◽  
Structural Properties ◽  
Molecular Beam ◽  
Self Organization ◽  
Transmission Electron ◽  
2D Model

High-resolution transmission electron microscopy (HR-TEM) has been used to investigate the structural properties of GeMn/Ge nanocolumns multilayer samples grown on Ge(001) substrates by means of molecular beam epitaxy (MBE) system. Four bilayers with the spacer thickness in the range between 6 nm and 15 nm and 10 periods of bilayers of Ge[Formula: see text]Mn[Formula: see text]/Ge nanocolumn are presented. A simplified 2D model based on the theory of elastic constant interactions has been used to provide reasonable explanations to the vertical self-organization of GeMn nanocolumns in multilayers.

Nano-Thermometry: Transmission Electron Microscopy of Femtosecond Laser Irradiated Co/Si Multilayer Thin Foils

2005 ◽  
Vol 899 ◽  
Author(s):  
Yoosuf Picard ◽  
Steven M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Amorphous Silicon ◽  
Heat Dissipation ◽  
Crystalline Silicon ◽  
Pulse Length ◽  
Multilayer Systems ◽  
Hole Edge ◽  
Thin Foils ◽  
Transmission Electron

AbstractPre-thinned foils composed of amorphous silicon and polycrystalline cobalt were irradiated using femtosecond pulse-length lasers at fluences sufficient for ablation (material removal). The resultant ablated hole and surrounding vicinity was studied using transmission electron microscopy to determine modifications to the structure. Evidence of cobalt silicide formation was observed within a 3 micron radius of the laser hole edge by use of selected area electron diffraction (SAED). In addition, elongated grains of crystalline silicon was observed within 500 nm of the laser hole edge, indicating melting of the amorphous silicon and heat dissipation slow enough to allow recyrstallization. This initial work demonstrates the use of pre-designed nanostructured multilayer systems as a method for nanoscale profiling of heat dissipation following pulsed laser irradiation.

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