Influence of geometry factors of in situ dc glow discharge on the diamond nucleation in a hot-filament chemical vapor deposition system

2000 ◽  
Vol 132 (2-3) ◽  
pp. 256-261 ◽  
Author(s):  
G.F Zhang ◽  
V Buck
Keyword(s):  
Chemical Vapor Deposition ◽  
Glow Discharge ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Dc Glow Discharge ◽  
Diamond Nucleation ◽  
Hot Filament

Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition

1995 ◽  
Vol 10 (2) ◽  
pp. 425-430 ◽  
Author(s):  
W. Zhu ◽  
F.R. Sivazlian ◽  
B.R. Stoner ◽  
J.T. Glass
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Wire Mesh ◽  
Reactor Wall ◽  
Nucleation Density ◽  
Si Substrate ◽  
Diamond Nucleation ◽  
Hot Filament

This paper describes a process for uniformly enhancing the nucleation density of diamond films on silicon (Si) substrates via dc-biased hot filament chemical vapor deposition (HFCVD). The Si substrate was negatively biased and the tungsten (W) filaments were positively biased relative to the grounded stainless steel reactor wall. It was found that by directly applying such a negative bias to the Si substrate in a typical HFCVD process, the enhanced diamond nucleation occurred only along the edges of the Si wafer. This resulted in an extremely nonuniform nucleation pattern. Several modifications were introduced to the design of the substrate holder, including a metal wire-mesh inserted between the filaments and the substrate, in the aim of making the impinging ion flux more uniformly distributed across the substrate surface. With such improved growth system designs, uniform enhancement of diamond nucleation across the substrate surface was realized. In addition, the use of certain metallic wire mesh sizes during biasing also enabled patterned or selective diamond deposition.

Characterization of diamond nucleation on Fe/Si substrate by hot-filament chemical vapor deposition

Vacuum ◽  
1993 ◽  
Vol 44 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Kenji Kobayashi ◽  
Tomoyasu Nakano ◽  
Nobuki Mutsukura ◽  
Yoshio Machi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Diamond Nucleation ◽  
Hot Filament

Analysis of diamond nucleation on molybdenum by biased hot filament chemical vapor deposition

2001 ◽  
Vol 10 (3-7) ◽  
pp. 383-387 ◽  
Author(s):  
W.L. Wang ◽  
K.J. Liao ◽  
L. Fang ◽  
J. Esteve ◽  
M.C. Polo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Nucleation ◽  
Hot Filament

Diamond Nucleation on Singlecrystalline 6H-SiC Substrates by Bias-Enhanced Nucleation in Hot Filament Chemical Vapor Deposition

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6295-6299 ◽  
Author(s):  
Xi Li ◽  
Tatsuru Shirafuji ◽  
Yasuaki Hayashi ◽  
Stanislav Lilov ◽  
Shigehiro Nishino
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Nucleation ◽  
Hot Filament
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