Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition

1995 ◽  
Vol 10 (2) ◽  
pp. 425-430 ◽  
Author(s):  
W. Zhu ◽  
F.R. Sivazlian ◽  
B.R. Stoner ◽  
J.T. Glass
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Wire Mesh ◽  
Reactor Wall ◽  
Nucleation Density ◽  
Si Substrate ◽  
Diamond Nucleation ◽  
Hot Filament

This paper describes a process for uniformly enhancing the nucleation density of diamond films on silicon (Si) substrates via dc-biased hot filament chemical vapor deposition (HFCVD). The Si substrate was negatively biased and the tungsten (W) filaments were positively biased relative to the grounded stainless steel reactor wall. It was found that by directly applying such a negative bias to the Si substrate in a typical HFCVD process, the enhanced diamond nucleation occurred only along the edges of the Si wafer. This resulted in an extremely nonuniform nucleation pattern. Several modifications were introduced to the design of the substrate holder, including a metal wire-mesh inserted between the filaments and the substrate, in the aim of making the impinging ion flux more uniformly distributed across the substrate surface. With such improved growth system designs, uniform enhancement of diamond nucleation across the substrate surface was realized. In addition, the use of certain metallic wire mesh sizes during biasing also enabled patterned or selective diamond deposition.

Characterization of diamond nucleation on Fe/Si substrate by hot-filament chemical vapor deposition

Vacuum ◽  
1993 ◽  
Vol 44 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Kenji Kobayashi ◽  
Tomoyasu Nakano ◽  
Nobuki Mutsukura ◽  
Yoshio Machi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Diamond Nucleation ◽  
Hot Filament

Achieving High Nucleation Density of Diamond Film Under Low Pressures in Hot-Filament Chemical Vapor Deposition

1994 ◽  
Vol 363 ◽  
Author(s):  
Yan Chen ◽  
Jun Mei ◽  
Qijin Chen ◽  
Zhangda Lin
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Heteroepitaxial Growth ◽  
Hot Filament ◽  
Low Pressures ◽  
Gaseous Source

AbstractDiamond have been deposited rapidly under low pressures (<0.1 Torr) via hot filament chemical vapor deposition (HFCVD) on either scratched or mirror-smooth single crystalline silicon and titanium with nucleation densities of 109–1011/cm2. The nucleation density increases with the pressure decreases. Hydrogen and methane were used as the gaseous source. Raman spectroscopy and scanning electron microscopy(SEM) were used to analyze the obtained films. This result breaks through the limit that diamond film can only be synthesized above 10 Torr, showing a promising prospect that, as is essential for heteroepitaxial growth of monocrystalline diamond films, diamond film can be easily nucleated on unscratched substrate via Hot Filament CVD.

Nucleation of diamond over nanotube coated Si substrate using hot filament chemical vapor deposition (CVD) system

2004 ◽  
Vol 21 (1) ◽  
pp. 262-266 ◽  
Author(s):  
Shafeeque G. Ansari ◽  
Hyung-Kee Seo ◽  
Gil-Sung Kim ◽  
Mushtaq Ahmad Dar ◽  
Md. Shahjahan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Hot Filament

The deposition of oriented diamond film by hot-filament chemical vapor deposition with separate reactant gas

1999 ◽  
Vol 14 (8) ◽  
pp. 3196-3199 ◽  
Author(s):  
G. C. Chen ◽  
C. Sun ◽  
R. F. Huang ◽  
L. S. Wen ◽  
D. Y. Jiang ◽  
...  
Keyword(s):  
Temperature Field ◽  
Chemical Vapor Deposition ◽  
Temperature Gradient ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Deposition Time ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Degree Of Orientation ◽  
Hot Filament

A (110)-oriented diamond film was deposited by hot filament chemical vapor deposition with H2 and CH4 separately introduced into the reactive zone. The film with a degree of orientation I(220)/I(111) of more than 200% and deposition rate of 2–3 μm/h was obtained for a deposition time of 17 h. The long deposition time enlarged the grain size and enhanced the degree of orientation, but too long a deposition time resulted in random growth. The temperature field was measured and also calculated using a simple model. Both results showed that a temperature field existed with varied gradients along the normal of substrate surface. The (110)-oriented diamond film was deposited in the zone with negative temperature gradient. The change in orientation occurring for long deposition times was ascribed to the change of temperature gradient.

Growth and Characterization of Polycrystalline Diamond Thin Films on Porous Silicon by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
E. J. Charlson ◽  
E. M. Charlson ◽  
T. Stacy ◽  
F. Shahedipour ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electrochemical Process ◽  
Nucleation Density ◽  
High Quality ◽  
Average Grain Size ◽  
Hot Filament

AbstractHot filament chemical vapor deposition (HFCVD) was utilized to grow high quality diamond film on porous silicon (PS) substrates to a thickness of 5–6 μm. Boron-doped silicon substrates of <100> orientation and resistivity of 5–15 ohm-cm were anodized by the electrochemical process to form PS. A slurry of diamond paste (1/4 micron average grain size) was rubbed on the samples for a few seconds before introduction into the chamber. Diamond film growth on the PS has the advantages of shorter incubation time and higher nucleation density as evident from scanning electron microscopy (SEM). The results of X-ray diffraction confirm the growth of predominatly (111) oriented high quality diamond film. Electrical properties were also studied by sputtering circular gold contacts on top of diamond film and measuring current-voltage (I-V) characteristics.

scholarly journals Effect of Si and SiO2Substrates on the Geometries of As-Grown Carbon Coils

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Semi Park ◽  
Sung-Hoon Kim ◽  
Tae-Gyu Kim
Keyword(s):  
Thin Film ◽  
Thermal Expansion ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quartz Substrate ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Thermal Chemical Vapor Deposition ◽  
Surface Morphologies

Carbon coils could be synthesized using C2H2/H2as source gases and SF6as an incorporated additive gas under thermal chemical vapor deposition system. Si substrate, SiO2thin film deposited Si substrate (SiO2substrate), and quartz substrate were employed to elucidate the effect of substrate on the formation of carbon coils. The characteristics (formation densities, morphologies, and geometries) of the deposited carbon coils on the substrate were investigated. In case of Si substrate, the microsized carbon coils were dominant on the substrate surface. While, in case of SiO2substrate, the nanosized carbon coils were prevailing on the substrate surface. The surface morphologies of samples were investigated step by step during the reaction process. The cause for the different geometry formation of carbon coils according to the different substrates was discussed in association with the different thermal expansion coefficient values of Si and SiO2substrates and the different etched characteristics of Si and SiO2substrates by SF6 + H2flow.

SURFACE AND QUALITY MODIFICATION OF DIAMOND-LIKE CARBON FILMS BY CO2 LASER HEATING ASSISTED HOT FILAMENT CHEMICAL VAPOR DEPOSITION

2008 ◽  
Vol 15 (06) ◽  
pp. 911-917
Author(s):  
VITTAYA AMORNKITBAMRUNG ◽  
ONG-ON TOPON
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Tight Binding ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Dynamics Simulation ◽  
Diamond Like Carbon ◽  
High Frequency Peak ◽  
Hot Filament

An infrared CO 2 laser was used for regional heating to study the heating effect on hot filament chemical vapor deposition of diamond-like carbon formation on Si (100) face substrates. The substrate surface temperature was about 450–500°C. The power of the laser called low, medium, and high raised the temperature of the substrate locally by 25, 45, and 55°C, respectively. At medium laser power, at the central laser beam region, a narrow Raman peak centered at 1438 cm-1 was detected. It can be concluded that this region has good-quality DLC. This moderate high-frequency peak corresponds to a fourfold-rotation-symmetry atom in an amorphous carbon network from the tight-binding molecular dynamics simulation of Wang and Ho.

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