Effects of the bias enhanced nucleation hot-filament chemical-vapor deposition parameters on diamond nucleation on iridium

This paper describes a process for uniformly enhancing the nucleation density of diamond films on silicon (Si) substrates via dc-biased hot filament chemical vapor deposition (HFCVD). The Si substrate was negatively biased and the tungsten (W) filaments were positively biased relative to the grounded stainless steel reactor wall. It was found that by directly applying such a negative bias to the Si substrate in a typical HFCVD process, the enhanced diamond nucleation occurred only along the edges of the Si wafer. This resulted in an extremely nonuniform nucleation pattern. Several modifications were introduced to the design of the substrate holder, including a metal wire-mesh inserted between the filaments and the substrate, in the aim of making the impinging ion flux more uniformly distributed across the substrate surface. With such improved growth system designs, uniform enhancement of diamond nucleation across the substrate surface was realized. In addition, the use of certain metallic wire mesh sizes during biasing also enabled patterned or selective diamond deposition.

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Characterization of diamond nucleation on Fe/Si substrate by hot-filament chemical vapor deposition

Vacuum ◽

10.1016/0042-207x(93)90002-r ◽

1993 ◽

Vol 44 (1) ◽

pp. 1-5 ◽

Cited By ~ 16

Author(s):

Kenji Kobayashi ◽

Tomoyasu Nakano ◽

Nobuki Mutsukura ◽

Yoshio Machi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Si Substrate ◽

Diamond Nucleation ◽

Hot Filament

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Influence of geometry factors of in situ dc glow discharge on the diamond nucleation in a hot-filament chemical vapor deposition system

Surface and Coatings Technology ◽

10.1016/s0257-8972(00)00907-5 ◽

2000 ◽

Vol 132 (2-3) ◽

pp. 256-261 ◽

Cited By ~ 7

Author(s):

G.F Zhang ◽

V Buck

Keyword(s):

Chemical Vapor Deposition ◽

Glow Discharge ◽

Vapor Deposition ◽

Chemical Vapor ◽

Dc Glow Discharge ◽

Diamond Nucleation ◽

Hot Filament

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Surface Roughness and Morphology Analysis Using an Atomic Force Microscopy of Polycrystalline Diamond Coated Si3N4 Deposited by Microwave Plasma Assisted Chemical Vapor Deposition

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.136.153 ◽

2008 ◽

Vol 136 ◽

pp. 153-160

Author(s):

Agung Purniawan ◽

E. Hamzah ◽

M.R.M. Toff

Keyword(s):

Surface Roughness ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Power ◽

Microwave Plasma ◽

Chemical Vapor ◽

Polycrystalline Diamond ◽

Chamber Pressure ◽

Diamond Nucleation ◽

Deposition Parameters

Diamond is the hardest material and has high chemical resistant which is one form of carbon. In the present work a study was carried out on polycrystalline diamond coated Si3N4 substrate. The diamond was deposited by Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) under varying deposition parameters namely CH4 diluted in H2, microwave power and chamber pressure. SEM and AFM are used to investigate the surface morphology and surface roughness. Nucleation phenomena and crystal width were also studied using AFM. Based on SEM investigation it was found that the chamber pressure and %CH4 have more significant effects on nucleation and facet of polycrystalline diamond, In addition microwave power has an effect on the diamond facet that changed from cubic to cauliflower structure. Surface roughness results show that increasing the %CH4 has decreased surface roughness 334.83 to 269.99 nm at 1 to 3% CH4, respectively. Increasing microwave power leads to increase in diamond nucleation and coalescence which lead to less surface roughness. Increasing gas pressure may eliminate Si contamination however it reduces diamond nucleation.

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