In situ thickness measurements in molecular beam epitaxy using alpha particle energy loss

1997 ◽  
Vol 94-95 ◽  
pp. 374-378 ◽  
Author(s):  
M. Beaudoin ◽  
Z. Gelbart ◽  
U. Giesen ◽  
I. Kelson ◽  
Y. Levy ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Energy Loss ◽  
Alpha Particle ◽  
Molecular Beam ◽  
Particle Energy ◽  
Alpha Particle Energy ◽  
Thickness Measurements ◽  
Particle Energy Loss

In situ real time monitoring of thickness and composition in MBE using alpha particle energy loss

1999 ◽  
Vol 201-202 ◽  
pp. 26-30 ◽  
Author(s):  
M. Beaudoin ◽  
M. Adamcyk ◽  
Y. Levy ◽  
J.A. MacKenzie ◽  
S. Ritchie ◽  
...  
Keyword(s):  
Energy Loss ◽  
Real Time ◽  
Alpha Particle ◽  
Particle Energy ◽  
Real Time Monitoring ◽  
Alpha Particle Energy ◽  
Particle Energy Loss

Diffusion studies of Ra and Pb in GaAs by the alpha-particle energy loss method

1998 ◽  
Vol 84 (11) ◽  
pp. 6003-6006 ◽  
Author(s):  
M. Adamcyk ◽  
M. Beaudoin ◽  
I. Kelson ◽  
Y. Levy ◽  
T. Tiedje
Keyword(s):  
Energy Loss ◽  
Alpha Particle ◽  
Particle Energy ◽  
Diffusion Studies ◽  
Alpha Particle Energy ◽  
Loss Method ◽  
Particle Energy Loss

Determining the profile of textured membranes by the alpha particle energy loss method

2002 ◽  
Vol 80 (14) ◽  
pp. 2607-2609 ◽  
Author(s):  
C. Kaiser ◽  
Y. Levy ◽  
T. Tiedje ◽  
Jeff F. Young ◽  
I. Kelson
Keyword(s):  
Energy Loss ◽  
Alpha Particle ◽  
Particle Energy ◽  
Alpha Particle Energy ◽  
Loss Method ◽  
Particle Energy Loss

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

In situ reflectance difference spectroscopy of N-plasma doped ZnTe grown by molecular beam epitaxy

1998 ◽  
Vol 73 (26) ◽  
pp. 3857-3859 ◽  
Author(s):  
D. Stifter ◽  
M. Schmid ◽  
K. Hingerl ◽  
A. Bonanni ◽  
M. Garcia-Rocha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy
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