Homogeneous line width of optical transitions and electronic energy relaxation in quantum dots

1999 ◽  
Vol 272 (1-4) ◽  
pp. 15-17 ◽  
Author(s):  
K Král
Keyword(s):  
Quantum Dots ◽  
Line Width ◽  
Energy Relaxation ◽  
Electronic Energy ◽  
Optical Transitions

Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots

1996 ◽  
Vol 54 (24) ◽  
pp. 17738-17744 ◽  
Author(s):  
M. J. Steer ◽  
D. J. Mowbray ◽  
W. R. Tribe ◽  
M. S. Skolnick ◽  
M. D. Sturge ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Energy Levels ◽  
Energy Relaxation ◽  
Electronic Energy ◽  
Self Organized ◽  
Electronic Energy Levels

ELECTRON-ENERGY RELAXATION IN POLAR SEMICONDUCTOR DOUBLE QUANTUM DOTS

2001 ◽  
Vol 15 (27) ◽  
pp. 3503-3512 ◽  
Author(s):  
K. KRÁL ◽  
Z. KHÁS ◽  
P. ZDENĚK ◽  
M. ČERŇANSKÝ ◽  
C. Y. LIN
Keyword(s):  
Quantum Dots ◽  
Relaxation Rate ◽  
Phonon Scattering ◽  
Energy Levels ◽  
Realistic Model ◽  
Energy Relaxation ◽  
Electronic Energy ◽  
Double Quantum ◽  
Quantum Bit ◽  
Electronic Energy Levels

The zero-dimensional semiconductor nanostructures belong to the candidates for the realization of the quantum bits. They are expected to be scalable for the purpose of tuning their physical properties. In these structures the quantum bit could be realized in the form of a single quantum dot with two electronic energy levels, with only one electron in the dot. As the basic states of the quantum bit, realized in this way, the two orbital states of the electron in the dot could be used. It appears however that usually the relaxation of the energy of the electron from the excited energy level is often rather fast in the polar semiconductor quantum dots. It is the purpose of this paper to present calculations of the relaxation rate of the electron in an asymmetric pair of tunneling coupled quantum dots, in which the two electronic orbitals of the quantum bit are located each in a separate dot. The calculation of the electronic energy relaxation is based on the multiple electron-LO-phonon scattering processes, implemented to the theory via the electronic self-energy taken in the self-consistent Born approximation. The dependence of the relaxation rate on the geometry of the pair of the coupled dots and on the lattice temperature is presented for a realistic model of this nanostructure.

Homogeneous Line-Width of Optical Transitions and Multiple Electron-LO-Phonon Scattering in Quantum Dots

2000 ◽  
Vol 47 (4A) ◽  
pp. 753-757 ◽  
Author(s):  
Karel Král ◽  
Zdenk Khás ◽  
Chung-Yi Lin ◽  
Sheng-Hsien Lin
Keyword(s):  
Quantum Dots ◽  
Line Width ◽  
Phonon Scattering ◽  
Optical Transitions

Effects of thermal emission and re-trapping of photo-injected carriers on the optical transitions of InAs/GaAs quantum dots

2021 ◽  
Vol 271 ◽  
pp. 115238
Author(s):  
Rihani Jawher ◽  
Radhwen Chtourou ◽  
Vincent Sallet ◽  
Mehrez Oueslati
Keyword(s):  
Quantum Dots ◽  
Thermal Emission ◽  
Optical Transitions

Polaron lifetime and energy relaxation in semiconductor quantum dots

2000 ◽  
Vol 62 (8) ◽  
pp. R4809-R4812 ◽  
Author(s):  
O. Verzelen ◽  
R. Ferreira ◽  
G. Bastard
Keyword(s):  
Quantum Dots ◽  
Energy Relaxation ◽  
Semiconductor Quantum Dots

scholarly journals Identification of Optical Transitions from CdTe and CdMnTe Quantum Dots Embedded in ZnTe Nanowires

2013 ◽  
Vol 124 (5) ◽  
pp. 824-826
Author(s):  
M. Szymura ◽  
Ł. Kłopotowski ◽  
P. Wojnar ◽  
G. Karczewski ◽  
T. Wojtowicz ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Transitions
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