Influence of process parameters on the characteristics of electrohydrodynamic-printed UV-curing conductive lines on the fabric

As a similar technology to the near-field static electrospinning, the emerging electrohydrodynamic (EHD) printing technology with digital printing process and compatibility of viscous particle-blended inks is one of the simplest methods of fabricating multifunctional electronic textiles.With increasing demands for textile-based conductive lines with controllable width and excellent electrical performance, it’s of great importance to know the influence of key process parameters on the morphology and electrical properties of EHD-printed UV-curing conductive lines on the fabric. This work will systematically explore the effect of the EHD printing process parameters (i.e. applied voltage, direct-writing height, flow rate and moving velocity of the substrate) on the morphology and electrical performance of the EHD-printed textile-based conductive lines, especially focus on the diffusion and penetration of inks on the rough and porous fabric. The UV-curing nano-silver ink with low temperature and fast curing features was selected, and the line width and electrical resistance of printed lines under different process parameters were observed and measured. The results showed that, unlike previous results about EHD printing on smooth and impermeable substrates, the ink diffusion related to fabric textures had a greater effect on the fabric-based conductive line width than the applied voltage and direct-writing height in the case of a stable jet. Meanwhile, the relationship between the line width and the flow rate met the equation of = 407.28 ∗ 1⁄2 , and the minimum volume on fabric per millimeter was 0.67μL to form continuous line with low electrical resistance. Additionally, the higher substrate moving velocity resulted in a smaller line width, while it deteriorated the thickness uniformity and electrical property of printed lines. Generally, due to the effect of surface structure of the fabric on the spreading and penetrating behavior of inks, the flow rate and the substrate moving velocity are two significant parameters ensuring the electrical property of printed lines. It is believed that these findings will provide some guides for applying electrohydrodynamic printing technology into flexible electronics on the woven fabric.

Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS

We have formed nanometer-wide lines & spaces by graphoepitaxy of sphere type polystyrene-poly dimethyl siloxane (PS-PDMS), with a molecular weight (MW) of 14.6 kg/mol., along electron-beam (EB)-drawn resist guide lines. We have 3-dimensionally ordered the sphere type PS-PDMS by controlling a thickness of the PS-PDMS along improved guide lines to form the line and space pattern. We obtained the thickness dependence on the pattern change such as nano-dot arrays and nano-line & space patterns. When the thickness increased to about +4 nm from the upper thickness for formation of the dot arrays, the line & space patterns have been formed with about 7 nm in line width and 14 nm in pitch.

Li(2p ← 2s) + Na(3s) pressure broadening in the far-wing and line-core profiles

This work reports pressure-broadening line-wing and line-core of the lithium Li (2p ← 2s) resonance line perturbed by ground sodium Na (3s) atoms. In far-wing region the calculations are performed quantum-mechanically and are intended to examine the photoabsorption coefficients at diverse temperatures. The results show the existence of three satellites, in the blue wing near the wavelengths 470nm and in the red wing around 862 and 1070nm. For the line-core region, by adopting the simplified Baranger model the line-width and line-shift rates are determined and their variation law with temperature is examined. No published data were found to compare these results with.

Low-Temperature Metallization and Laser Trimming Process for Microwave Dielectric Ceramic Filters

This paper describes a low-temperature metallization and laser trimming process for microwave dielectric ceramic filters. The ceramic was metalized by electroless copper plating at a temperature lower than those of conventional low-temperature co-fired ceramic (LTCC) and direct bond copper (DBC) methods. Compared with filters made via traditional silver paste sintering, the metal in the holes of the microwave dielectric filters is uniform, smooth, and does not cause clogging nor become detached. Further, the batches of fabricated filters do not require individual inspection, reducing energy, labor, cost, and time requirements. A microwave dielectric filter was then manufactured from the prepared ceramic using a laser trimming machine with a line width and position error within ±50 μm; this demonstrates a more accurately controlled line width than that offered by screen printing. After using HFSS software simulations for preliminary experiments, the microwave dielectric filter was tuned to a target Wi-Fi band of 5.15–5.33 GHz; the return loss was <−10 dB, and the insertion loss was >−3 dB. To implement the real-world process, the laser parameters were optimized. Laser trimming has a higher success rate than traditional manual trimming, and the microwave dielectric filter manufactured here verified the feasibility of this process.

Cause analysis of width-dependence of on-current variability in thin gate-all-around silicon nanowire MOSFET

In this study, the width dependence of on-current variability in extremely narrow gate-all-around (GAA) silicon nanowire MOSFET down to 2nm width is analyzed by variability decomposition into components as well as analyzing the Pelgrom plot. It is found that the current variability rapidly increases below 4nm mainly due to quantum-effect-induced threshold voltage variability and silicon-thickness-fluctuation-induced mobility fluctuation (μfluctuation). The current variability becomes even worse in 2nm, which is fundamentally caused by line width roughness.

EPR study of Mn site substituted Pr based Doped Rare Earth Manganites

In this paper, we present the investigations of Electron Paramagnetic Resonance (EPR) on Mn site substituted Pr based Doped rare Earth Manganites i.e. Pr0.60Ca0.40MnO3 and Pr0.60Ca0.40Mn0.85Zn0.15O3. Changes in physical properties as lattice parameters, average valence of Mn site was observable of those manganites. X-ray diffraction pattern shows that both Pr0.60Ca0.40MnO3 and Pr0.60Ca0.40Mn0.85Zn0.15O3 have single phase and without the other secondary or impurity phase and indexed supported the Pbnm space group. The value of x in Pr0.60Ca0.40Mn1-xZnxO3 increases, the average valence V was increased except for a fixed composition, i.e. x remains unchanged, the average valence V was decreased as we go from less valency to high valency (i.e., from divalent to trivalent and from trivalent to tetravalent. The EDXS analysis of those materials shows good homogeneity, but there are experimental errors in composition. It is seen from the SEM images that is formed in different shape grains. The average grain sizes of the samples are different for Pr0.60Ca0.40MnO3 and Pr0.06Ca0.40Mn0.85Zn0.15O3 The paramagnetic resonance spectra parameters (effective g-factor, peak-to-peak line width) of Pr0.60Ca0.40MnO3 and Pr0.60Ca0.40Mn0.85Zn0.15O3.have been used to study the paramagnetic spin correlations and spin dynamics. As for Pr0.60Ca0.40MnO3 the line width becomes wider because of the contribution of small polaron jumping within the PM mechanism. However, as for Pr0.60Ca0.40Mn0.85Zn0.15O3 the broadening of EPR line-width is understood with the spin-lattice relaxation mechanism, g value decreased from 1.99 to 1.79. Therefore, the Zn dopant not solely changes the parent spin correlation in the PM regime however additionally suppresses the development of orbital ordering.

INVESTIGATION OF THE PHOTORESIST PROFILE IN SELF-ALIGNED DOUBLE PATTERNING PROCESS APPLYING MATHEMATICAL MODELING METHOD

This paper describes a method that can improve the photoresist profile irregularity in self-aligned double patterning process using the Prolith software environment simulation. The new technique helps not only to find the weak points in the etching process, but also to improve the line width of the resulting elements.