Electron paramagnetic resonance of the scandium acceptor in 4H and 6H silicon carbide

1999 ◽  
Vol 273-274 ◽  
pp. 667-671 ◽  
Author(s):  
J.-M Spaeth ◽  
S Greulich-Weber ◽  
M März ◽  
E.N Mokhov ◽  
E.N Kalabukhova
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic

High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance Study

2005 ◽  
Vol 483-485 ◽  
pp. 489-492 ◽  
Author(s):  
P.G. Baranov ◽  
Ivan V. Ilyin ◽  
Marina V. Muzafarova ◽  
E.N. Mokhov ◽  
S.G. Konnikov
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
High Temperature ◽  
Electron Paramagnetic Resonance Study ◽  
High Temperature Annealing ◽  
Axially Symmetric ◽  
Paramagnetic Resonance ◽  
Defect Clusters ◽  
Defect Complexes ◽  
Electron Paramagnetic

The high-temperature stable defect complexes in 6H-SiC crystals created by heavy neutron irradiation and following high-temperature annealing have been discovered by EPR. After annealing at 1500°C at least five new axially symmetric centers with the electron spin S = 1/2 and S = 1 were shown to arise in 6H-SiC crystals. The striking feature of all discovered centers is a strong hyperfine interaction with a great number (up to twelve) of equivalent host Si (C) atoms. Two models, a four-vacancy complex VSi-3VC, and a split-interstitial antisite (C2)Si or a pair of two antisites (C2)Si-SiC are discussed. There is a good probability that some of new centers could be related to the famous D1 and DII centers. After annealing at 2000°C the dc1-dc4 centers disappeared and a new triplet center labeled as N-V in the form of a silicon vacancy and a nitrogen atom in neighboring carbon substitutional position has been observed. The parameters of this center are similar to that for well-known N-V center in diamond.

Electron paramagnetic resonance of the scandium acceptor in 6H and 4H silicon carbide

2000 ◽  
Vol 15 (1) ◽  
pp. 55-60 ◽  
Author(s):  
M März ◽  
S Greulich-Weber ◽  
J-M Spaeth ◽  
E N Mokhov ◽  
E N Kalabukhova
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic

Electron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon Carbide

2000 ◽  
Vol 338-342 ◽  
pp. 809-812 ◽  
Author(s):  
Siegmund Greulich-Weber ◽  
M. März ◽  
Johann Martin Spaeth ◽  
E.N. Mokhov ◽  
Ekaterina N. Kalabukhova
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic
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