Silicon displacement threshold energy determined by electron paramagnetic resonance and positron annihilation spectroscopy in cubic and hexagonal polytypes of silicon carbide

In this work we used Positron Annihilation Spectroscopy (PAS) and Electron Paramagnetic Resonance (EPR) to investigate the properties of vacancy defects produced by low energy electron irradiation. N-doped 3C-SiC and 6H-SiC monocrystals have been irradiated with electrons at different energies from 240keV to 900keV. EPR measurements show that Frenkel pairs VSi 3-/Si are created in 6H-SiC when electron irradiation is performed at low energy (240-360 keV). EPR also indicates that the silicon displacement threshold energy is higher in 3C-SiC than in 6HSiC. Moreover, PAS results show that the size and concentration of the vacancy defects decrease when the electron energy decreases for both polytypes. PAS detects vacancy defects in 240keV electron irradiated 3C-SiC, and the detection of the carbon vacancy is proposed.

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Optically detected electron paramagnetic resonance of the shallow aluminium acceptor in 4H- and 6H- silicon carbide

Solid State Communications ◽

10.1016/0038-1098(96)80017-2 ◽

1996 ◽

Vol 98 (9) ◽

pp. 835-838 ◽

Cited By ~ 6

Author(s):

J. Reinke ◽

S. Greulich-Weber ◽

J.-M. Spaeth

Keyword(s):

Silicon Carbide ◽

Electron Paramagnetic Resonance ◽

Paramagnetic Resonance ◽

Optically Detected ◽

Electron Paramagnetic

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High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance Study

Materials Science Forum - Silicon Carbide and Related Materials 2004 ◽

10.4028/0-87849-963-6.489 ◽

2005 ◽

pp. 489-492

Author(s):

P.G. Baranov ◽

I.V. Ilyin ◽

Marina V. Muzafarova ◽

E.N. Mokhov ◽

S.G. Konnikov

Keyword(s):

Silicon Carbide ◽

Electron Paramagnetic Resonance ◽

High Temperature ◽

Electron Paramagnetic Resonance Study ◽

Paramagnetic Resonance ◽

Defect Clusters ◽

Electron Paramagnetic

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High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance Study

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.489 ◽

2005 ◽

Vol 483-485 ◽

pp. 489-492 ◽

Cited By ~ 2

Author(s):

P.G. Baranov ◽

Ivan V. Ilyin ◽

Marina V. Muzafarova ◽

E.N. Mokhov ◽

S.G. Konnikov

Keyword(s):

Silicon Carbide ◽

Electron Paramagnetic Resonance ◽

High Temperature ◽

Electron Paramagnetic Resonance Study ◽

High Temperature Annealing ◽

Axially Symmetric ◽

Paramagnetic Resonance ◽

Defect Clusters ◽

Defect Complexes ◽

Electron Paramagnetic

The high-temperature stable defect complexes in 6H-SiC crystals created by heavy neutron irradiation and following high-temperature annealing have been discovered by EPR. After annealing at 1500°C at least five new axially symmetric centers with the electron spin S = 1/2 and S = 1 were shown to arise in 6H-SiC crystals. The striking feature of all discovered centers is a strong hyperfine interaction with a great number (up to twelve) of equivalent host Si (C) atoms. Two models, a four-vacancy complex VSi-3VC, and a split-interstitial antisite (C2)Si or a pair of two antisites (C2)Si-SiC are discussed. There is a good probability that some of new centers could be related to the famous D1 and DII centers. After annealing at 2000°C the dc1-dc4 centers disappeared and a new triplet center labeled as N-V in the form of a silicon vacancy and a nitrogen atom in neighboring carbon substitutional position has been observed. The parameters of this center are similar to that for well-known N-V center in diamond.

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