High resolution electron microscopy studies on the interface structure of deformed stress induced martensite variants in a Ti–Ni–Nb shape memory alloy

ABSTRACTThe interface structure in a Ti/TiN multilayer material has been investigated by high resolution transmission electron microscopy (HRTEM). It was shown that the α-Ti and β-TiN layers consisted of many cylindrical crystals growing along the close packed directions normal to the surface of a stainless steel. There existed specific orientation relationship at the Ti/TiN interfaces without transition layers: (111)TiN ‖ (001)Ti, [110]TiN ‖ [100]Ti. However there was no such orientation relationship at the Ti/TiN interfaces with TixN (x >1) transition layers.

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The Observation Of Mg)-Al Interface By Hrem and Microdiffraction

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118126 ◽

1985 ◽

Vol 43 ◽

pp. 240-241

Author(s):

S.Y. Zhang ◽

J.M. Cowley

Keyword(s):

Electron Microscopy ◽

Electron Beam ◽

High Resolution ◽

Materials Science ◽

Incident Beam ◽

High Resolution Electron Microscopy ◽

Interface Structure ◽

Resolution Electron ◽

Powerful Means ◽

Interface Structures

The combination of high resolution electron microscopy (HREM) and nanodiffraction techniques provided a powerful means for characterizing many of the interface structures which are of fundamental importance in materials science. In this work the interface structure between magnesium oxide and aluminum has been examined by HREM (with JEM-200CX) and nanodiffraction (with HB-5). The interfaces were formed by evaporating Al on freshly prepared cubic MgO smoke crystals under various vacuum conditions, at 10 -4, 10-5 10-6 and 10-7 torr. The Al layers on the MgO (001) surface are about 100Å thick. TEM observations were performed with the incident beam along the MgO [100] direction so that the interface could be revealed clearly. The nanodiffraction patterns were obtained with the electron beam of 15Å diameter parallel to the interface.

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A HREM study of V/Al2O3 interface

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100121132 ◽

1992 ◽

Vol 50 (1) ◽

pp. 146-147

Author(s):

Y. Ikuhara ◽

P. Pirouz ◽

A. H. Heuer ◽

S. Yadavalli ◽

C. P. Flynn

Keyword(s):

Electron Microscopy ◽

Electron Microscope ◽

High Resolution ◽

Substrate Temperature ◽

Molecular Beam ◽

High Resolution Electron Microscopy ◽

Interface Structure ◽

Cross Sectional ◽

Plan View ◽

Resolution Electron

The interface structure between vanadium and the R-plane of sapphire (α-Al2O3) was studied by conventional and cross-sectional high resolution electron microscopy (HREM) to clarify the atomic structure of the interface.A 57 nm thick vanadium film was deposited on the (1102) (R) plane of sapphire by molecular beam epitaxy (MBE) at a substrate temperature of 920 K in a vacuum of 10-10torr. The HREM observations of the interface were done from three directions: two cross-sectional views (parallel to [0221]Al2O3 and [1120]Al2O3) and a plan view (parallel to [2201]Al2O3) by a top-entry JEOL 4000EX electron microscope (400 kV).

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