scholarly journals Semiconductor thin films by chemical bath deposition for solar energy related applications

1998 ◽  
Vol 52 (3-4) ◽  
pp. 313-344 ◽  
Author(s):  
P Nair
Keyword(s):  
Thin Films ◽  
Solar Energy ◽  
Chemical Bath Deposition ◽  
Semiconductor Thin Films

Substrate spacing and thin-film yield in chemical bath deposition of semiconductor thin films

2000 ◽  
Vol 15 (11) ◽  
pp. 1022-1029 ◽  
Author(s):  
A Arias-Carbajal Reádigos ◽  
V M García ◽  
O Gomezdaza ◽  
J Campos ◽  
M T S Nair ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Bath Deposition ◽  
Semiconductor Thin Films

Characterization and Application of Semiconductor Thin Films Deposited by Chemical Bath Deposition

2004 ◽  
Vol 10 (S02) ◽  
pp. 610-611 ◽  
Author(s):  
Chih-hung Chang ◽  
Yu-Jen Chang ◽  
Doo-Hyoung Lee ◽  
Si-Ok Ryu ◽  
Tae-Jin Lee
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Semiconductor Thin Films

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

DIRECT FABRICATION OF ORIENTED MnS THIN FILMS BY CHEMICAL BATH DEPOSITION

2004 ◽  
Vol 11 (01) ◽  
pp. 27-31 ◽  
Author(s):  
DONG BO FAN ◽  
HAO WANG ◽  
YONG CAI ZHANG ◽  
JIE CHENG ◽  
HUI YAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Concentration Ratio ◽  
Manganese Sulfide ◽  
Bath Temperature ◽  
Processing Route ◽  
X Ray Diffraction ◽  
Absorption Data ◽  
Semiconductor Thin Films ◽  
Cbd Method

Oriented thin films of manganese sulfide ( MnS ) have been deposited by a simple chemical bath deposition (CBD) method, which was a soft solution-processing route for preparation of semiconductor thin films. By varying deposition conditions (e.g. bath temperature, concentration ratio of Mn 2+ ions to CH 3– CS – NH 2 and concentration ratio of Mn 2+ ions to C 6 H 5 Na 3 O 7), the effects of synthetic conditions on the properties of films were investigated. On the basis of experimental results, the synthetic conditions were optimized. The crystallinity and orientation of films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Using the optical absorption data, the optical band gap for the MnS films was determined to be 3.23 eV.

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