Mathematical model simulating the growth of compound semiconductor thin films via chemical bath deposition

1999 ◽  
Vol 206 (1-2) ◽  
pp. 68-74 ◽  
Author(s):  
P.K Nair ◽  
P Parmananda ◽  
M.T.S Nair
Keyword(s):  
Thin Films ◽  
Mathematical Model ◽  
Chemical Bath Deposition ◽  
Compound Semiconductor ◽  
Semiconductor Thin Films

Pit nucleation in compound semiconductor thin films

2003 ◽  
Vol 794 ◽  
Author(s):  
Mathieu Bouville ◽  
Michael L. Falk ◽  
Joanna Mirecki Millunchick
Keyword(s):  
Thin Films ◽  
Three Dimensional ◽  
Growth Conditions ◽  
Compound Semiconductor ◽  
Nucleation Process ◽  
Stages Of Growth ◽  
Semiconductor Thin Films ◽  
Experimental Parameters ◽  
Pit Nucleation ◽  
Good Agreement

ABSTRACTPit nucleation has been observed in a variety of semiconductor thin films. We present a model in which pit nucleation is considered to arise from a near-equilibrium nucleation process in which the adatom concentration plays an important role. Although pits relieve elastic energy more efficiently than islands, pit nucleation is prevented if the adatom concentration is too high. Inhomogeneities in the adatom density on the surface due to three-dimensional islands enhance pit nucleation. Thermodynamic considerations predict several different growth regimes in which pits may nucleate at different stages of growth depending on the materials system and growth conditions. However kinetics must be taken into account to make direct comparisons to experimental observations. These comparisons show good agreement given the uncertainties in quantifying experimental parameters such as the surface energy.

Substrate spacing and thin-film yield in chemical bath deposition of semiconductor thin films

2000 ◽  
Vol 15 (11) ◽  
pp. 1022-1029 ◽  
Author(s):  
A Arias-Carbajal Reádigos ◽  
V M García ◽  
O Gomezdaza ◽  
J Campos ◽  
M T S Nair ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Bath Deposition ◽  
Semiconductor Thin Films
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