The absorbing properties of one-dimensional plasma photonic crystals

2016 ◽  
Vol 82 (1) ◽  
Author(s):  
Limei Qi

Using the transfer matrix method, absorbing properties of electromagnetic waves in one-dimensional plasma photonic crystals are proposed. Compared with the absorption of bulk plasma, more absorbing bands have been found in one-dimensional plasma photonic crystals, and the first absorbing band appears below the plasma frequency. These absorbing bands can be controlled by varying structure parameters, plasma parameters and the incident angle. Results show that the periodic number and collision frequency only control the absorbing magnitude. Plasma frequency, plasma thickness and incident angle affect both the absorbing magnitude and locations. Increasing the dielectric constant of the dielectric makes more absorbing bands appear. These features of one-dimensional plasma photonic crystals would have potential applications in tunable millimetre absorbers.

2019 ◽  
Vol 26 (5) ◽  
pp. 052107 ◽  
Author(s):  
Haiyun Tan ◽  
Chenggang Jin ◽  
Lanjian Zhuge ◽  
Xuemei Wu

2015 ◽  
Vol 22 (2) ◽  
pp. 022122 ◽  
Author(s):  
S. Shukla ◽  
S. Prasad ◽  
V. Singh

2021 ◽  
Author(s):  
Hong-Mei Peng ◽  
Bao-Fei Wan ◽  
Peng-Xiang Wang ◽  
Dan Zhang ◽  
Hai-Feng Zhang

Abstract In this paper, the characteristics of the omnidirectional band gap (OBG) for one-dimensional (1D) plasma cylindrical photonic crystals (PCPCs) are based on an improved Fibonacci topological (IFT) structure are studied. The influences of the azimuthal mode number, incident angle, plasma thickness, and plasma frequency on the OBG are discussed. It is concluded that increasing the azimuth modulus can significantly expand the bandwidth of the OBG, and the OBG can be moved to the low-frequency direction by increasing the plasma frequency. In addition, an interesting phenomenon can be found that when the number of azimuthal modes is equal to 2, the TM wave can produce an extra high reflection zone. It provides a theoretical support for designing the narrowband filters without introducing any physical defect layers in the structure.


2005 ◽  
Vol 86 (9) ◽  
pp. 091112 ◽  
Author(s):  
Xiaochuang Xu ◽  
Yonggang Xi ◽  
Dezhuan Han ◽  
Xiaohan Liu ◽  
Jian Zi ◽  
...  

2018 ◽  
Vol 57 (28) ◽  
pp. 8119 ◽  
Author(s):  
Yu Ma ◽  
Hao Zhang ◽  
Haifeng Zhang ◽  
Ting Liu ◽  
Wenyu Li

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