scholarly journals The generation of images of surface structures by laser-accelerated protons

2006 ◽  
Vol 24 (1) ◽  
pp. 181-184 ◽  
Author(s):  
H. RUHL ◽  
T. COWAN ◽  
F. PEGORARO

Ion acceleration by lasers is one of the most important innovations in laser-plasma research in recent years. A mechanism that has gained great attention due to the remarkable properties of the accelerated beam is laser acceleration of protons from the rear surface of solid targets. A striking prediction is that these protons are capable of generating images of micro-structures present on this surface. These images might be useful to measure properties of the accelerated beam. In this article, we address the physics of the generation of images of surface structures imprinted into the target back surface with laser-accelerated protons.

2006 ◽  
Vol 32 (3) ◽  
pp. 205-221 ◽  
Author(s):  
S. G. Bochkarev ◽  
V. Yu. Bychenkov ◽  
V. T. Tikhonchuk

2021 ◽  
Vol 92 (12) ◽  
pp. 123506
Author(s):  
A. G. Luchinin ◽  
V. A. Malyshev ◽  
E. A. Kopelovich ◽  
K. F. Burdonov ◽  
M. E. Gushchin ◽  
...  

2012 ◽  
Vol 472-475 ◽  
pp. 1846-1850
Author(s):  
Shan Shan Dai ◽  
Gao Jie Zhang ◽  
Xiang Dong Luo ◽  
Jing Xiao Wang ◽  
Wen Jun Chen ◽  
...  

In this work, the effect of aluminum back surface field formed by screen printed various amount of Al paste on the effective rear surface recombination velocity (Seff) and the internal rear reflectance coeffeicient (Rb) of commercial mono-silicon solar cells was investigated. We demonstrated the effect of Seffand Rbon the performance of Al-BSF solar cells by simulating them with PC1D. The simulated results showed that the lower Seffcould get higher open circuit voltage (Voc), at the same time, the larger Rbcould get higher short-circuit current (Isc). Experimentally, we investigated the Seffand Rbthrough depositing Al paste with various amount (3.7, 5, 6, and 8 mg/cm2) for fabricating Al-BSF mono-silicon solar cells. Four group cells were characterized by light I-V, spectral response, hemispherical reflectance and scanning electron microscope (SEM) measurements. It was found that, a minimum Seffof 350 cm/s was gotten from the cells with Al paste of 8 mg/cm2, which was extracted by matching quantum efficiency (QE) from 800 nm to 1200 nm with PC1D, and a maximum Rbof 53.5% was obtained from Al paste of 5 mg/cm2by calculating at 1105 nm with PC1D. When the amount of Al paste was higher than 5mg/cm2, there were less Seffand lower Rb. On the other hand, when Al amount was 3.7mg/cm2, it was too little to form a closed BSF. Based on the SEM graphs and simulations with PC1D, a simple explaination was proposed for the experimental results.


Lubricants ◽  
2019 ◽  
Vol 7 (5) ◽  
pp. 43 ◽  
Author(s):  
Stefan Rung ◽  
Kevin Bokan ◽  
Frederick Kleinwort ◽  
Simon Schwarz ◽  
Peter Simon ◽  
...  

In this contribution we report on the possibilities of dry and lubricated friction modification introduced by different laser surface texturing methods. We compare the potential of Laser-Induced Periodic Surface Structures and Laser Beam Interference Ablation on 100Cr6 steel in a linear reciprocating ball-on-disc configuration using 100Cr6 steel and tungsten carbide balls with load forces between 50 mN and 1000 mN. For dry friction, we find a possibility to reduce the coefficient of friction and we observe a pronounced direction dependency for surfaces fabricated by Laser Beam Interference Ablation. Furthermore, Laser-Induced Periodic Surface Structures result in a load-dependent friction reduction for lubricated linear reciprocating movements. This work helps to identify the modification behaviour of laser generated micro structures with feature sizes of approximately 1 µm and reveals new possibilities for surface engineering.


2013 ◽  
Vol 85 (2) ◽  
pp. 751-793 ◽  
Author(s):  
Andrea Macchi ◽  
Marco Borghesi ◽  
Matteo Passoni

2008 ◽  
Vol 2008 ◽  
pp. 1-10 ◽  
Author(s):  
M. Hofmann ◽  
S. Kambor ◽  
C. Schmidt ◽  
D. Grambole ◽  
J. Rentsch ◽  
...  

A novel plasma-enhanced chemical vapour deposited (PECVD) stack layer system consisting of a-SiOx:H, a-SiNx:H, and a-SiOx:H is presented for silicon solar cell rear side passivation. Surface recombination velocities below 60 cm/s (after firing) and below 30 cm/s (after forming gas anneal) were achieved. Solar cell precursors without front and rear metallisation showed implied open-circuit voltages Voc values extracted from quasi-steady-state photoconductance (QSSPC) measurements above 680 mV. Fully finished solar cells with up to 20.0% energy conversion efficiency are presented. A fit of the cell's internal quantum efficiency using software tool PC1D and a comparison to a full-area aluminium-back surface field (Al-BSF) and thermal SiO2 is shown. PECVD-ONO was found to be clearly superior to Al-BSF. A separation of recombination at the metallised and the passivated area at the solar cell's rear is presented using the equations of Fischer and Kray. Nuclear reaction analysis (NRA) has been used to evaluate the hydrogen depth profile of the passivation layer system at different stages.


Sign in / Sign up

Export Citation Format

Share Document