Production and characterization of high-aspect-ratio probes for use in resonance-mode AFM

Author(s):  
K. F. Jarausch ◽  
C. B. Mooney ◽  
D. P. Griffis ◽  
G. M. Shedd ◽  
P. E. Russell

Applications of atomic force microscopy (AFM) for the characterization and metrology of technologically-important objects (e.g. x-ray lithography masks) has led to the development of special-purpose, high-aspect-ratio probes. Measuring objects that have deep, narrow trenches requires a controlled probe geometry. The probe radius and aspect ratio determine the congruence of the acquired AFM image to the true profile of the sample. As is illustrated schematically in Figure 1(a), the usual batch-fabricated AFM probe cannot reach down into deep or narrow trenches. Highaspect- ratio AFM probes that can overcome this limitation (Figure lb), have been developed. Probes of ≤100 nm shaft diameter, and up to microns in length, can be grown by electron-beam contamination writing. Focused ion beams have also been used to sharpen conventional probes by rastering a circular pattern around the highest point, removing the“shoulders” by sputtering, and thereby improving the aspect ratio. Previous work has demonstrated the use of such probes in standard, contact-mode AFM. This paper extends the application of these techniques to the creation of probes for resonance-mode AFM, and characterizes the performance of the resulting probes.

2008 ◽  
Vol 19 (23) ◽  
pp. 235704 ◽  
Author(s):  
Minhua Zhao ◽  
Vaneet Sharma ◽  
Haoyan Wei ◽  
Robert R Birge ◽  
Jeffrey A Stuart ◽  
...  

2020 ◽  
Vol 12 (41) ◽  
pp. 46571-46577
Author(s):  
Heekwon Lee ◽  
Zhuofei Gan ◽  
Mojun Chen ◽  
Siyi Min ◽  
Jihyuk Yang ◽  
...  

2006 ◽  
Vol 45 (14) ◽  
pp. 3201 ◽  
Author(s):  
J. Garnaes ◽  
P.-E. Hansen ◽  
N. Agersnap ◽  
J. Holm ◽  
F. Borsetto ◽  
...  

CIRP Annals ◽  
2007 ◽  
Vol 56 (1) ◽  
pp. 533-536 ◽  
Author(s):  
F.Z. Fang ◽  
Z.W. Xu ◽  
S. Dong ◽  
G.X. Zhang

2017 ◽  
Vol 179 ◽  
pp. 24-32 ◽  
Author(s):  
Peter Knittel ◽  
Nicolas Hibst ◽  
Boris Mizaikoff ◽  
Steffen Strehle ◽  
Christine Kranz

Author(s):  
Imtisal Akhtar ◽  
Malik Abdul Rehman ◽  
Yongho Seo

Three-dimensional integration and stacking of semiconductor devices with high density, its compactness, miniaturization and vertical 3D stacking of nanoscale devices highlighted many challenging problems in the 3D parameter’s such as CD (critical dimension) measurement, depth measurement of via holes, internal morphology of through silicon via (TSV), etc. Current challenge in the high-density 3D semiconductor devices is to measure the depth of through silicon via (TSV) without destructing the sample; TSVs are used in 3D stacking devices to connect the wafers stacked vertically to reduce the wiring delay, power dissipation, and of course, the form factor in the integration system. Special probes and algorithms have been designed to measure 3D parameters like wall roughness, sidewall angle, but these are only limited to deep trench-like structures and cannot be applied to structures like via holes and protrusions. To address these problems, we have proposed an algorithm based nondestructive 3D Atomic Force Microscopy (AFM). Using the high aspect ratio (5, 10, 20, 25) multiwall carbon nanotubes (MWCNTs) AFM probe, the depth of holes up to 1 micron is faithfully obtained. In addition to this, internal topography, side walls, and location of via holes are obtained faithfully. This atomic force microscopy technique enables to 3D scan the features (of any shape) present above and below the surface.


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