Fabrication and characterization - by High Resolution Electron Microscopy and atom probe microanalysis - of Co-based metallic multilayer films

Author(s):  
Amanda K. Petford-Long ◽  
A. Cerezo ◽  
M.G. Hetherington

The fabrication of multilayer films (MLF) with layer thicknesses down to one monolayer has led to the development of materials with unique properties not found in bulk materials. The properties of interest depend critically on the structure and composition of the films, with the interfacial regions between the layers being of particular importance. There are a number of magnetic MLF systems based on Co, several of which have potential applications as perpendicular magnetic (e.g Co/Cr) or magneto-optic (e.g. Co/Pt) recording media. Of particular concern are the effects of parameters such as crystallographic texture and interface roughness, which are determined by the fabrication conditions, on magnetic properties and structure.In this study we have fabricated Co-based MLF by UHV thermal evaporation in the prechamber of an atom probe field-ion microscope (AP). The multilayers were deposited simultaneously onto cobalt field-ion specimens (for AP and position-sensitive atom probe (POSAP) microanalysis without exposure to atmosphere) and onto the flat (001) surface of oxidised silicon wafers (for subsequent study in cross-section using high-resolution electron microscopy (HREM) in a JEOL 4000EX. Deposi-tion was from W filaments loaded with material in the form of wire (Co, Fe, Ni, Pt and Au) or flakes (Cr). The base pressure in the chamber was around 8×10−8 torr during deposition with a typical deposition rate of 0.05 - 0.2nm/s.

1987 ◽  
Vol 103 ◽  
Author(s):  
S. R Nutt ◽  
J. E. Keem

ABSTRACTWe have prepared multilayer films of W-Si with bilayer repeat spacing from approximately 1.5 nm to 9 nm and performed high resolution electron microscopy and low angle x-ray scattering on them. Average composition estimates as inferred from deposition conditions, x ray scattering and electron microscopy are compared. Determinations of the individual layer thickness ratios by electron microscopy and x ray scattering vary significantly from expectations as the bilayer thickness approaches 1.5 nm. Layer intermixing to increase as the bilayer thickness decreases. Composition profiles as inferred from the Cuk x ray profile are compared to those inferred from the high resolution electron micrographs. Visual observations from melectron microscopy are presented indicating that the interface roughness is rapidly damped in the W-Si multilayer system. Estimates of the layer uniformity are made from the high resolution images.


1996 ◽  
Vol 466 ◽  
Author(s):  
L. D. Marks ◽  
E. Bengu ◽  
R. Plass ◽  
T. Ichimiya ◽  
P. M. Ajayan ◽  
...  

ABSTRACTRecent work has demonstrated that high resolution electron microscopy in plan-view imaging mode is capable of directly imaging surfaces at a resolution of better than 2 Å. For the particular case of the Si (111) 7×7 surface, we have been able to image not only the adatoms visible in STM images, but all the atoms in the top three atomic layers including the dimers. The potential applications of this approach and its limitations will be discussed.


2011 ◽  
Vol 17 (S2) ◽  
pp. 760-761 ◽  
Author(s):  
S Kuchibhatla ◽  
V Shutthanandan ◽  
B Arey ◽  
L Kovarik ◽  
C Wang ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.


1990 ◽  
Vol 187 ◽  
Author(s):  
A. Cerezo ◽  
M.G. Hetherington ◽  
A.J.K. Petford-Long

AbstractThe direct measurement of the composition variations in transition metal multilayers has been carried out using the atom-probe and the position sensitive atom-probe (POSAP). The atom-probe and POSAP do not have sufficient resolution to determine the crystal structure and this complementary information has been obtained using high resolution electron microscopy.


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