High Resolution TEM of Post-Deposition Ion Implanted C-BN Films

Post-deposition ion implantation of boron nitride (BN) films is to be considered as a powerful method for improvement of adhesion between films and substrates and reduction of compressive stresses, which usually accompany the growth of cubic BN.The goal of this investigation is microcharacterization of as-deposited and ion-implanted BN films to better understand effect of ion implantation on microstructure of the films and film/substrate interface. High Resolution TEM (HF-2000 with field emission gun) has been utilized because of nanocrystalline dimensions of both cubic (c-) and hexagonal (h-) BN phases.BN films have been deposited on (100) oriented Si substrates by magnetically enhanced activated reactive evaporation2. Plasma source ion implantation has been performed to make surface modifications and to improve the adhesion of the films. X/S specimens for TEM and HRTEM have been prepared in a routine manner, using G-1 epoxy for coupling the specimens, Dimpler VCR D500I, and Gatan Precision Ion Polishing System for final thinning.