scholarly journals Measuring the Characteristic Length Scale of Medium Range Order in Amorphous Silicon Using Variable Resolution Fluctuation Electron Microscopy

2005 ◽  
Vol 11 (S02) ◽  
Author(s):  
L N Nittala ◽  
R D Twesten ◽  
P M Voyles ◽  
J R Abelson
Keyword(s):  
Electron Microscopy ◽  
Amorphous Silicon ◽  
Characteristic Length ◽  
Range Order ◽  
Length Scale ◽  
Characteristic Length Scale ◽  
Variable Resolution ◽  
Medium Range Order ◽  
Medium Range ◽  
Fluctuation Electron Microscopy

Observations of structural order in ion-implanted amorphous silicon

2001 ◽  
Vol 16 (11) ◽  
pp. 3030-3033 ◽  
Author(s):  
Ju-Yin Cheng ◽  
J. M. Gibson ◽  
D. C. Jacobson
Keyword(s):  
Electron Microscopy ◽  
Amorphous Silicon ◽  
Random Network ◽  
Dark Field ◽  
Range Order ◽  
Length Scale ◽  
Medium Range Order ◽  
Medium Range ◽  
Fluctuation Electron Microscopy ◽  
Ion Implanted

Medium-range order in ion-implanted amorphous silicon has been observed using fluctuation electron microscopy. In fluctuation electron microscopy, variance of dark-field image intensity contains the information of high-order atomic correlations, primarily in medium-range order length scale (1–3 nm). Thermal annealing greatly reduces the order and leaves a random network. It appears that the free energy change previously observed on relaxation may therefore be associated with randomization of the network. In this paper, we discuss the origin of the medium-range order during implantation, which can be interpreted as a paracrystalline state, that is, a disordered network enclosing compacts of highly topologically ordered grains on the length scale of 1–3 nm with significant strain fields.

Hydrogen-Induced Reduction in Medium Range Order of a-Si Thin Films Observed using Fluctuation Electron Microscopy

2004 ◽  
Vol 10 (S02) ◽  
pp. 802-803
Author(s):  
Lakshmi Narayana Nittala ◽  
Sreenivas Jayaraman ◽  
Brent A Sperling ◽  
John R Abelson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Fluctuation Electron Microscopy

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Nanometer-scale Structural Relaxation in Zr-based Bulk Metallic Glass

2007 ◽  
Vol 1048 ◽  
Author(s):  
Jinwoo Hwang ◽  
Hongbo Cao ◽  
Paul M. Voyles
Keyword(s):  
Electron Microscopy ◽  
Differential Scanning Calorimetry ◽  
Metallic Glass ◽  
Bulk Metallic Glass ◽  
Range Order ◽  
Nanometer Scale ◽  
Length Scale ◽  
Scanning Calorimetry ◽  
Medium Range Order ◽  
Medium Range

AbstractWe investigated the influence of annealing on the nanometer-scale medium-range order in Zr54Cu38Al8 bulk metallic glass using fluctuation electron microscopy. Fluctuation microscopy experiments probing structure at a length scale of 1 nm show that the as-cast Zr bulk metallic glass contains significant medium range order. That structure is unchanged by annealing at 87% of the glass transition temperature for 24 hours, although that anneal does significantly change the differential scanning calorimetry trace.

Evidence from Simulations for Orientational Medium Range Order in Fluctuation-Electron-Microscopy Observations of a-Si

2004 ◽  
Vol 10 (S02) ◽  
pp. 820-821 ◽  
Author(s):  
Sanjay V. Khare ◽  
Serge M. Nakhmanson ◽  
Paul M. Voyles ◽  
Pawel Keblinski ◽  
John R. Abelson
Keyword(s):  
Electron Microscopy ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Fluctuation Electron Microscopy

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

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