Nanometer-scale Structural Relaxation in Zr-based Bulk Metallic Glass

2007 ◽  
Vol 1048 ◽  
Author(s):  
Jinwoo Hwang ◽  
Hongbo Cao ◽  
Paul M. Voyles

AbstractWe investigated the influence of annealing on the nanometer-scale medium-range order in Zr54Cu38Al8 bulk metallic glass using fluctuation electron microscopy. Fluctuation microscopy experiments probing structure at a length scale of 1 nm show that the as-cast Zr bulk metallic glass contains significant medium range order. That structure is unchanged by annealing at 87% of the glass transition temperature for 24 hours, although that anneal does significantly change the differential scanning calorimetry trace.

2014 ◽  
Vol 1649 ◽  
Author(s):  
Pei Zhang ◽  
M. F. Besser ◽  
M. J. Kramer ◽  
P. M. Voyles

ABSTRACTWe have previously reported, based on fluctuation electron microscopy (FEM) data, that Zr50Cu45Al5 bulk metallic glass (BMG) contains significant icosahedral and crystal-like medium-range order. Here, we report similar finding for Zr54Cu38Al8 BMG, which is a poorer glass former. Like Zr50Cu45Al5, Zr54Cu38Al8 contains icosahedral and crystal-like structures. In the as-cast state, the crystal-like peak in the FEM data is stronger than icosahedral-like peak. After annealing at 0.83Tg (573 K), the icosahedral-like peak increases, but, unlike Zr50Cu45Al5, the crystal-like peak does not decrease. This tendency toward stronger, more thermally stable crystal-like order may be associated with the poorer glass forming ability of Zr54Cu38Al8.


2006 ◽  
Vol 14 (8-9) ◽  
pp. 888-892 ◽  
Author(s):  
Cang Fan ◽  
T.W. Wilson ◽  
W. Dmowski ◽  
H. Choo ◽  
J.W. Richardson ◽  
...  

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
C. Gammer ◽  
B. Escher ◽  
C. Ebner ◽  
A. M. Minor ◽  
H. P. Karnthaler ◽  
...  

Metals ◽  
2016 ◽  
Vol 6 (10) ◽  
pp. 240 ◽  
Author(s):  
Yong Xu ◽  
Meijie Yu ◽  
Rongfu Xu ◽  
Xianzhong Wang ◽  
Zhigang Wang ◽  
...  

2020 ◽  
Vol 25 ◽  
pp. 101427
Author(s):  
N.K. Sarkar ◽  
B. Vishwanadh ◽  
C.L. Prajapat ◽  
P.D. Babu ◽  
G. Ravikumar ◽  
...  

2001 ◽  
Vol 16 (11) ◽  
pp. 3030-3033 ◽  
Author(s):  
Ju-Yin Cheng ◽  
J. M. Gibson ◽  
D. C. Jacobson

Medium-range order in ion-implanted amorphous silicon has been observed using fluctuation electron microscopy. In fluctuation electron microscopy, variance of dark-field image intensity contains the information of high-order atomic correlations, primarily in medium-range order length scale (1–3 nm). Thermal annealing greatly reduces the order and leaves a random network. It appears that the free energy change previously observed on relaxation may therefore be associated with randomization of the network. In this paper, we discuss the origin of the medium-range order during implantation, which can be interpreted as a paracrystalline state, that is, a disordered network enclosing compacts of highly topologically ordered grains on the length scale of 1–3 nm with significant strain fields.


Sign in / Sign up

Export Citation Format

Share Document