Quantitative Strain Measurement in Sub-45 nm CMOS Transistors by Convergent Beam Electron Diffraction (CBED) at Low Temperature and Nano Beam Diffraction (NBD)

2008 ◽  
Vol 14 (S2) ◽  
pp. 386-387 ◽  
Author(s):  
L Clement ◽  
D Delille
Keyword(s):  
New Mexico ◽  
Electron Diffraction ◽  
Low Temperature ◽  
Strain Measurement ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Cmos Transistors ◽  
Convergent Beam ◽  
Beam Diffraction

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

The role of projection operators in the theory of N-beam diffraction and the inversion of three-beam elastic scattering intensities

1999 ◽  
Vol 55 (2) ◽  
pp. 216-219 ◽  
Author(s):  
A. C. Hurley ◽  
A. F. Moodie ◽  
A. W. S. Johnson ◽  
P. C. Abbott
Keyword(s):  
Elastic Scattering ◽  
Electron Diffraction ◽  
Electron Diffraction Pattern ◽  
Convergent Beam Electron Diffraction ◽  
Projection Operators ◽  
Mathematical Basis ◽  
Beam Electron ◽  
Convergent Beam ◽  
Beam Diffraction

Commencing from a projection-operator description of N-beam diffraction, the mathematical basis for the recovery of phase and amplitude information from a three-beam convergent-beam electron diffraction pattern is given for both the centrosymmetric and noncentrosymmetric cases. The algebra is available in Mathematica Notebook form from the URL ftp://ftp.physics.uwa.edu.au/pub/EMC/3BeamAlgebra.nb.

Direct strain measurement in a 65nm node strained silicon transistor by convergent-beam electron diffraction

2006 ◽  
Vol 89 (16) ◽  
pp. 161907 ◽  
Author(s):  
Peng Zhang ◽  
Andrei A. Istratov ◽  
Eicke R. Weber ◽  
Christian Kisielowski ◽  
Haifeng He ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Strain Measurement ◽  
Convergent Beam Electron Diffraction ◽  
Strained Silicon ◽  
Beam Electron ◽  
Convergent Beam ◽  
Silicon Transistor

The Suppression of Contamination in the Convergent-Beam Electron Diffraction Camera

1977 ◽  
Vol 32 (11) ◽  
pp. 1326-1327 ◽  
Author(s):  
W. C. T. Dowell ◽  
P. Goodman
Keyword(s):  
Electron Diffraction ◽  
Vapour Phase ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Specimen Temperature ◽  
Surface Migration ◽  
Before And After ◽  
Convergent Beam ◽  
Beam Diffraction ◽  
Convergent Beam Diffraction

Abstract It has been demonstrated that specimen contamination in convergent-beam diffraction operation can be prevented by maintaining the specimen temperature between -110 °C and -165 °C, without the use of especially high or clean vacuum conditions. At these temperatures, surface migration of molecules causing contamination is evidently inhibited. Precautions to prevent deposition from the vapour phase both before and after cooling are also required.

Introduction: A Special Issue on Electron Diffraction

2003 ◽  
Vol 9 (5) ◽  
pp. 377-378 ◽  
Author(s):  
John C.H. Spence
Keyword(s):  
Electron Diffraction ◽  
Strain Measurement ◽  
Direct Methods ◽  
Convergent Beam Electron Diffraction ◽  
Special Issue ◽  
Beam Electron ◽  
Wide Range ◽  
Hours Of Work ◽  
Precession Electron Diffraction ◽  
Convergent Beam

This special issue of Microscopy and Microanalysis explores quantitative electron diffraction from nonbiological materials. Jim Turner and I have put many hours of work into bringing it together, and we thank the authors for their fine contributions. The articles cover a wide range of materials and techniques, from convergent-beam electron diffraction (CBED) to the new Kohler SAD mode, as well as the use of direct methods, the study of diffuse elastic scattering from defects, strain measurement, and multiwavelength methods. We were sorry that we could not obtain recent work using the precession electron diffraction camera by our deadline, but readers should be aware of that promising method also.

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