Direct strain measurement in a 65nm node strained silicon transistor by convergent-beam electron diffraction

2006 ◽  
Vol 89 (16) ◽  
pp. 161907 ◽  
Author(s):  
Peng Zhang ◽  
Andrei A. Istratov ◽  
Eicke R. Weber ◽  
Christian Kisielowski ◽  
Haifeng He ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Strain Measurement ◽  
Convergent Beam Electron Diffraction ◽  
Strained Silicon ◽  
Beam Electron ◽  
Convergent Beam ◽  
Silicon Transistor

Comparison of Zone Axes for Convergent Beam Electron Diffraction Strain Measurements of a Strained Silicon Transistor

2008 ◽  
Vol 14 (S2) ◽  
pp. 852-853
Author(s):  
DR Diercks ◽  
MJ Kaufman
Keyword(s):  
New Mexico ◽  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Strained Silicon ◽  
Strain Measurements ◽  
Beam Electron ◽  
Convergent Beam ◽  
Silicon Transistor

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Quantitative Strain Measurement in Sub-45 nm CMOS Transistors by Convergent Beam Electron Diffraction (CBED) at Low Temperature and Nano Beam Diffraction (NBD)

2008 ◽  
Vol 14 (S2) ◽  
pp. 386-387 ◽  
Author(s):  
L Clement ◽  
D Delille
Keyword(s):  
New Mexico ◽  
Electron Diffraction ◽  
Low Temperature ◽  
Strain Measurement ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Cmos Transistors ◽  
Convergent Beam ◽  
Beam Diffraction

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Introduction: A Special Issue on Electron Diffraction

2003 ◽  
Vol 9 (5) ◽  
pp. 377-378 ◽  
Author(s):  
John C.H. Spence
Keyword(s):  
Electron Diffraction ◽  
Strain Measurement ◽  
Direct Methods ◽  
Convergent Beam Electron Diffraction ◽  
Special Issue ◽  
Beam Electron ◽  
Wide Range ◽  
Hours Of Work ◽  
Precession Electron Diffraction ◽  
Convergent Beam

This special issue of Microscopy and Microanalysis explores quantitative electron diffraction from nonbiological materials. Jim Turner and I have put many hours of work into bringing it together, and we thank the authors for their fine contributions. The articles cover a wide range of materials and techniques, from convergent-beam electron diffraction (CBED) to the new Kohler SAD mode, as well as the use of direct methods, the study of diffuse elastic scattering from defects, strain measurement, and multiwavelength methods. We were sorry that we could not obtain recent work using the precession electron diffraction camera by our deadline, but readers should be aware of that promising method also.

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