scholarly journals In-Situ Atomic-Resolution Study of Stress-Induced Unusual Large Strain Plasticity of Semiconductor nanowires

2009 ◽  
Vol 15 (S2) ◽  
pp. 1182-1183
Author(s):  
Z Zhang ◽  
X Han

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

2007 ◽  
Vol 19 (16) ◽  
pp. 2112-2118 ◽  
Author(s):  
X. D. Han ◽  
K. Zheng ◽  
Y. F. Zhang ◽  
X. N. Zhang ◽  
Z. Zhang ◽  
...  

2010 ◽  
Vol 654-656 ◽  
pp. 2293-2296 ◽  
Author(s):  
Xiao Dong Han ◽  
Li Hua Wang ◽  
Pan Liu ◽  
Yong Hai Yue ◽  
Ming Jie Yang ◽  
...  

Using our recently developed in situ transmission electron microscopy techniques, we revealed that the FCC structured Ni nanowires with diameter of about 30 nm possess ultra-large strain plasticity. Dynamic complex dislocation activities mediated the large strain bent-plasticity and they were monitored at atomic scale in real time. The bent-induced strain gradient allows studying the strain effects on dislocation mediated plasticity. We also explored the deformation techniques to more general cases, the nano thin films. An example of tensile Pt ultra-thin film is presented.


Nano Letters ◽  
2007 ◽  
Vol 7 (2) ◽  
pp. 452-457 ◽  
Author(s):  
X. D. Han ◽  
Y. F. Zhang ◽  
K. Zheng ◽  
X. N. Zhang ◽  
Z. Zhang ◽  
...  

2003 ◽  
Vol 22 (3) ◽  
pp. 341-356 ◽  
Author(s):  
Mathias Wallin ◽  
Matti Ristinmaa ◽  
Niels Saabye Ottosen

PAMM ◽  
2014 ◽  
Vol 14 (1) ◽  
pp. 373-374
Author(s):  
Hendrik Donner ◽  
Jörn Ihlemann

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