scholarly journals The Mechanism of {113} Defect Formation in Silicon: Clustering of Interstitial–Vacancy Pairs Studied by In Situ High-Resolution Electron Microscope Irradiation

2013 ◽  
Vol 19 (S5) ◽  
pp. 38-42 ◽  
Author(s):  
Ludmila I. Fedina ◽  
Se Ahn Song ◽  
Andrey L. Chuvilin ◽  
Anton K. Gutakovskii ◽  
Alexander V. Latyshev
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Point Defect ◽  
Defect Formation ◽  
Silicon Crystal ◽  
Equilibrium Structure ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Atomic Chains ◽  
High Resolution Electron Microscope

AbstractWe report the direct visualization of point defect clustering in {113} planes of silicon crystal using a transmission electron microscope, which was supported by structural modeling and high-resolution electron microscope image simulations. In the initial stage an accumulation of nonbonded interstitial–vacancy (I–V) pairs stacked at a distance of 7.68 Å along neighboring atomic chains located on the {113} plane takes place. Further broadening of the {113} defect across its plane is due to the formation of planar fourfold coordinated defects (FFCDs) perpendicular to chains accumulating I–V pairs. Closely packed FFCDs create a sequence of eightfold rings in the {113} plane, providing sites for additional interstitials. As a result, the perfect interstitial chains are built on the {113} plane to create an equilibrium structure. Self-ordering of point defects driven by their nonisotropic strain fields is assumed to be the main force for point defect clustering in the {113} plane under the existence of an energy barrier for their recombination.

Scanning Device Combined with Conventional Electron Miscroscope

1971 ◽  
Vol 29 ◽  
pp. 28-29
Author(s):  
H. Koike ◽  
K. Ueno ◽  
M. Suzuki
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Basic Function ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Different Types ◽  
Specimen Area ◽  
High Resolution Electron Microscope ◽  
Scanning Em ◽  
Conventional Transmission Electron Microscope

A scanning image observation device has been developed for use in conjunction with the JEM-100B Electron Microscope, thereby enabling the microscope to function as a high resolution scanning EM in addition to its basic function as a conventioanl high resolution electron microscope. As a result, it is possible to observe three different types of image of the same specimen area; viz, secondary electron images, transmission scanning images and conventional transmission electron microscope images. It is also possible to detect strays and obsorbed electrons, so that, the combined instrument provides a means for obtaining a wealth of information about the specimen.

An Analysis of Dissociation of Molecules in a High Resolution Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 486-487
Author(s):  
Mihir Parikh
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Cross Sections ◽  
Resolving Power ◽  
Peak Intensity ◽  
Molecular Film ◽  
Resolution Electron ◽  
Dissociation Cross Section ◽  
High Resolution Electron Microscope ◽  
The Stability

It is well known that the resolution of bio-molecules in a high resolution electron microscope depends not just on the physical resolving power of the instrument, but also on the stability of these molecules under the electron beam. Experimentally, the damage to the bio-molecules is commo ly monitored by the decrease in the intensity of the diffraction pattern, or more quantitatively by the decrease in the peaks of an energy loss spectrum. In the latter case the exposure, EC, to decrease the peak intensity from IO to I’O can be related to the molecular dissociation cross-section, σD, by EC = ℓn(IO /I’O) /ℓD. Qu ntitative data on damage cross-sections are just being reported, However, the microscopist needs to know the explicit dependence of damage on: (1) the molecular properties, (2) the density and characteristics of the molecular film and that of the support film, if any, (3) the temperature of the molecular film and (4) certain characteristics of the electron microscope used

Computer-Controlled Hrem Alignment Using Automated Diffractogram Analysis

1990 ◽  
Vol 48 (1) ◽  
pp. 532-533
Author(s):  
G.Y. Fan ◽  
O.L. Krivanek
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
The Other ◽  
Full Information ◽  
Resolution Electron ◽  
Skilled Operator ◽  
Automatic Alignment ◽  
High Resolution Electron Microscope ◽  
Computer Controlled ◽  
Recorded Image

Full alignment of a high resolution electron microscope (HREM) requires five parameters to be optimized: the illumination angle (beam tilt) x and y, defocus, and astigmatism magnitude and orientation. Because neither voltage nor current centering lead to the correct illumination angle, all the adjustments must be done on the basis of observing contrast changes in a recorded image. The full alignment can be carried out by a computer which is connected to a suitable image pick-up device and is able to control the microscope, sometimes with greater precision and speed than even a skilled operator can achieve. Two approaches to computer-controlled (automatic) alignment have been investigated. The first is based on measuring the dependence of the overall contrast in the image of a thin amorphous specimen on the relevant parameters, the other on measuring the image shift. Here we report on our progress in developing a new method, which makes use of the full information contained in a computed diffractogram.

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