Forced laser nanostructuring of the surface of alumina-oxide ceramics

The possibility of creating quasiperiodic nanostructures on the surface of articles made of ceramic materials based on -Al2O3 under the action of a laser beam moved by a two-coordinate linear stepping motor (LSM) is shown. It is shown that the cause of the arising non-uniformity of heat release and convective instability of the molten layer are electromagnetic surface waves at the "conductor-insulator" interface, while the "conductor" is the melt layer. The discreteness of the laser beam movement due to LSD makes it possible to create a regular wave-like relief on the melt surface, which plays the role of an input diffraction structure for gen-erating a surface wave of TM polarization.

Устойчивые к полевым повреждениям структуры кремний-сверхтонкий окисел (42 нм)-поликремний

Results of studies of silicon−silicon-ultrathin oxide (42 A˚ )−polysilicon structures structures stabile resistant to field damage are presented. It was found that the total recharging of localized electronic states and minority charge carriers, concentrated at the substrate-insulator interface, which occurs with a change in the field voltage and is close to the same characteristic of structures with an oxide thickness of 37 A˚ . The current, flowing through SiO2, in the enrichment state of the semiconductor increases with increasing voltage much more strongly than in the state of depletion. Moreover, the asymmetry of current-voltage characteristics in relation to the polarity of the voltage, falling on the insulator in samples with a thickness of 42 A˚ SiO2 is more pronounced than in structures with an oxide of 37 A˚ . An explanation for this asymmetry is possible, if the potential relief in the insulator has a maximum, significantly shifted to the oxide−polysilicon interface, and the potential on the branch from the semiconductor side significantly decreases to the contact with the substrate.

Electrophysical Characteristics of Tantalum Oxide Structures

In this work has been developed a technology for obtaining nickel-insulator-aluminum structure with 7 nm thick tantalum oxide deposited by atomic-layer deposition. An asymmetric current-voltage characteristic of the structure is obtained, and the heights of potential barriers at the metal-insulator interface are determined. The permittivity of the tantalum oxide film has been determined experimentally in this work.