scholarly journals Microspacing In-Air Sublimation Growth of Ultrathin Organic Single Crystals

2020 ◽  
Vol 32 (18) ◽  
pp. 7618-7629
Author(s):  
Qing Guo ◽  
Xin Ye ◽  
Qinglian Lin ◽  
Quanxiang Han ◽  
Chao Ge ◽  
...  
Keyword(s):  
Single Crystals ◽  
Sublimation Growth

Different macroscopic approaches to the modelling of the sublimation growth of SiC single crystals

1997 ◽  
Vol 46 (1-3) ◽  
pp. 308-312 ◽  
Author(s):  
M. Pons ◽  
E. Blanquet ◽  
J.M. Dedulle ◽  
R. Madar ◽  
C. Bernard
Keyword(s):  
Single Crystals ◽  
Sublimation Growth

Sublimation growth and characterization of bulk aluminum nitride single crystals

1997 ◽  
Vol 179 (3-4) ◽  
pp. 363-370 ◽  
Author(s):  
Cengiz M. Balkaş ◽  
Zlatko Sitar ◽  
Tsvetanka Zheleva ◽  
L. Bergman ◽  
R. Nemanich ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Single Crystals ◽  
Sublimation Growth

Thermodynamic Analysis of Impurities in the Sublimation Growth of AlN Single Crystals

2006 ◽  
Vol 955 ◽  
Author(s):  
Li Du ◽  
James H Edgar
Keyword(s):  
Crystal Growth ◽  
Partial Pressure ◽  
Single Crystals ◽  
High Temperatures ◽  
Thermodynamic Analysis ◽  
Vapor Phase ◽  
Graphite Furnace ◽  
Main Species ◽  
Carbon Species ◽  
Sublimation Growth

ABSTRACTThe vapor phase species responsible for the transport of impurities in the sublimation-recondensation growth of bulk AlN crystals was predicted by thermodynamic analysis. AlN powder containing oxygen was investigated in Al-O-N system for an inert reactor. Dialuminum monoxide (Al2O) is strongly favored over all other possible oxygen containing species including NO and NO2. For AlN crystal growth in a graphite furnace, the Al-O-C-N system was studied. CO is the main species containing carbon and oxygen, and has a partial pressure more than one hundred times higher than all other carbon or oxygen containing species. Its partial pressure even exceeds that of Al vapor. Pure AlN growth on SiC seed was represented in the Al-N-Si-C system. SiC is not stable at high temperatures, the presence of nitrogen accelerates the decomposition of the SiC, and the most probable volatile silicon and carbon species originating from the SiC seed are Si, CN and C2N2.

A transient model for the sublimation growth of silicon carbide single crystals

1999 ◽  
Vol 205 (3) ◽  
pp. 294-304 ◽  
Author(s):  
Nikolaus Bubner ◽  
Olaf Klein ◽  
Peter Philip ◽  
Jürgen Sprekels ◽  
Krzysztof Wilmański
Keyword(s):  
Silicon Carbide ◽  
Single Crystals ◽  
Transient Model ◽  
Sublimation Growth

Status of Large Diameter SiC Single Crystals at II-VI

2008 ◽  
Vol 600-603 ◽  
pp. 35-38 ◽  
Author(s):  
Avinash K. Gupta ◽  
Ilya Zwieback ◽  
Andrew E. Souzis ◽  
Murugesu Yoganathan ◽  
Thomas Anderson
Keyword(s):  
Single Crystals ◽  
Large Diameter ◽  
Lattice Curvature ◽  
Rocking Curve ◽  
Si Substrates ◽  
Edge Defects ◽  
New Generation ◽  
Sublimation Growth ◽  
Lattice Matched

II-VI is developing large-diameter SiC crystals to be used as lattice-matched, high thermal conductivity substrates for new generation GaN-based and SiC-based semiconductor devices. Large-diameter 6H SiC single crystals are grown at II-VI using our Advanced PVT sublimation growth process. Stable SI properties are achieved by compensation with vanadium, which results in high and spatially uniform resistivity, on the order of 1011 Ohm-cm. The quality of the presently grown 100 mm 6H SI substrates has been dramatically improved [1], and they are free of edge defects. Micropipe density in the 100 mm 6H SI substrates ranges from 2 to 8 cm-2 and dislocation density from 3·104 to 6·104 cm-2. X-ray rocking curves measured on as-sawn 100 mm 6H wafers showed edge-to-edge lattice curvature () between 0.1° and 0.3° and FWHM of the rocking curve between 50 and 100 arc-seconds

Sublimation growth and vibrational microspectrometry of α-MoO3 single crystals

2011 ◽  
Vol 318 (1) ◽  
pp. 987-990 ◽  
Author(s):  
V.V. Atuchin ◽  
T.A. Gavrilova ◽  
T.I. Grigorieva ◽  
N.V. Kuratieva ◽  
K.A. Okotrub ◽  
...  
Keyword(s):  
Single Crystals ◽  
Sublimation Growth
Sign in / Sign up

Export Citation Format

Share Document