Ultrafast Interfacial Charge Transfer of Cesium Lead Halide Perovskite Films CsPbX3 (X = Cl, Br, I) with Different Halogen Mixing

2018 ◽  
Vol 122 (48) ◽  
pp. 27148-27155 ◽  
Author(s):  
Pingli Zhang ◽  
Gangbei Zhu ◽  
Ying Shi ◽  
Yunpeng Wang ◽  
Jiahua Zhang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Interfacial Charge Transfer ◽  
Halide Perovskite ◽  
Interfacial Charge ◽  
Lead Halide

scholarly journals Interfacial charge-transfer doping of metal halide perovskites for high performance photovoltaics

2019 ◽  
Vol 12 (10) ◽  
pp. 3063-3073 ◽  
Author(s):  
Nakita K. Noel ◽  
Severin N. Habisreutinger ◽  
Alba Pellaroque ◽  
Federico Pulvirenti ◽  
Bernard Wenger ◽  
...  
Keyword(s):  
Charge Transfer ◽  
High Performance ◽  
Radiative Recombination ◽  
Metal Halide ◽  
Device Performance ◽  
Interfacial Charge Transfer ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
Interfacial Charge

We demonstrate a method for controlled p-doping of the halide perovskite surface using molecular dopants, resulting in reduced non-radiative recombination losses and improved device performance.

The suppression of spin–orbit coupling effect by the ZnO layer of La0.7Sr0.3MnO3/ZnO heterostructures grown on (001) oriented Si restores the negative magnetoresistance

Nanoscale ◽  
2021 ◽  
Author(s):  
Bibekananda Das ◽  
Prahallad Padhan
Keyword(s):  
Charge Transfer ◽  
Coupling Effect ◽  
Orbit Coupling ◽  
Negative Magnetoresistance ◽  
Magnetic Scattering ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Interfacial Charge Transfer ◽  
Positive Magnetoresistance ◽  
Interfacial Charge

In Si–La0.7Sr0.3MnO3, the interfacial charge transfer driven strong localized antiferromagnetic and spin–orbit couplings favor positive magnetoresistance, which is suppressed by strong magnetic scattering induced by the top ZnO layer results in negative magnetoresistance.

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