Examination of Relationship between Urbach Energy and Open-Circuit Voltage Deficit of Flexible Cu(In,Ga)Se2 Solar Cell for Its Improved Photovoltaic Performance

2019 ◽  
Vol 2 (11) ◽  
pp. 7843-7849
Author(s):  
Jakapan Chantana ◽  
Takahito Nishimura ◽  
Yu Kawano ◽  
Seiki Teraji ◽  
Taichi Watanabe ◽  
...  
2015 ◽  
Vol 3 (4) ◽  
pp. 1530-1539 ◽  
Author(s):  
Aung Ko Ko Kyaw ◽  
Dominik Gehrig ◽  
Jie Zhang ◽  
Ye Huang ◽  
Guillermo C. Bazan ◽  
...  

A high VOC of 1V is achieved in the bulk heterojunction solar cell using the solution-processed small molecule donor p-DTS(FBTTh2)2 and indene-C60 bis-adduct acceptor.


2016 ◽  
Vol 4 (20) ◽  
pp. 7943-7949 ◽  
Author(s):  
Jingjing Chang ◽  
Hai Zhu ◽  
Juanxiu Xiao ◽  
Furkan Halis Isikgor ◽  
Zhenhua Lin ◽  
...  

The presence of excess PbI2 can affect the structure of perovskites and photovoltaic performance of perovskite solar cells. Increased open-circuit voltage could be achieved by introducing proper PbI2. However, shorter carrier lifetime and increased recombination and resistance were observed when an excess of PbI2 was used.


Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.


2020 ◽  
Vol 92 (2) ◽  
pp. 20901
Author(s):  
Abdul Kuddus ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.


Vacuum ◽  
2016 ◽  
Vol 128 ◽  
pp. 91-98 ◽  
Author(s):  
Sheng Ge ◽  
Haitao Xu ◽  
Wenzhen Wang ◽  
Runan Cao ◽  
Yanglin Wu ◽  
...  

2009 ◽  
Vol 48 (24) ◽  
pp. 4402-4405 ◽  
Author(s):  
Elizabeth A. Gibson ◽  
Amanda L. Smeigh ◽  
Loïc Le Pleux ◽  
Jérôme Fortage ◽  
Gerrit Boschloo ◽  
...  

2015 ◽  
Vol 5 (4) ◽  
pp. 682-694 ◽  
Author(s):  
Lu Wang ◽  
Jianshu Han ◽  
Anthony Lochtefeld ◽  
Andrew Gerger ◽  
Allen Barnett

2018 ◽  
Vol 9 ◽  
pp. 1802-1808 ◽  
Author(s):  
Katherine Atamanuk ◽  
Justin Luria ◽  
Bryan D Huey

The nanoscale optoelectronic properties of materials can be especially important for polycrystalline photovoltaics including many sensor and solar cell designs. For thin film solar cells such as CdTe, the open-circuit voltage and short-circuit current are especially critical performance indicators, often varying between and even within individual grains. A new method for directly mapping the open-circuit voltage leverages photo-conducting AFM, along with an additional proportional-integral-derivative feedback loop configured to maintain open-circuit conditions while scanning. Alternating with short-circuit current mapping efficiently provides complementary insight into the highly microstructurally sensitive local and ensemble photovoltaic performance. Furthermore, direct open-circuit voltage mapping is compatible with tomographic AFM, which additionally leverages gradual nanoscale milling by the AFM probe essentially for serial sectioning. The two-dimensional and three-dimensional results for CdTe solar cells during in situ illumination reveal local to mesoscale contributions to PV performance based on the order of magnitude variations in photovoltaic properties with distinct grains, at grain boundaries, and for sub-granular planar defects.


2010 ◽  
Vol 132 (2) ◽  
Author(s):  
Yi-Chun Chen ◽  
Chao-Ying Yu ◽  
Chih-Ping Chen ◽  
Shu-Hua Chan ◽  
Ching Ting

A novel soluble conjugated polymers, P2, with coplanar thiophene-phenylene-thiophene unit is designed and synthesized as suitable active material used in tandem cells to compensate the poly(3-hexylthiophene) (P3HT)/[6,6]-phenyl-C71 butyric acid methyl ester (PC71BM) bulk-heterojunction cell in this paper. P2 polymer bears advantages in both low optical bandgap (1.7 eV) and high hole mobility properties (3.4×10−3 cm2/V-s from field-effect transistor measurement). Furthermore, the electrochemical studies of P2 indicate desirable highest occupied molecular orbital/lowest unoccupied molecular orbital (HOMO/LUMO) band structure that enables a high open circuit voltage when pairing with PCBM acceptor. The best power conversion efficiency of this polymer solar cell thus far based on P2/PC71BM system with a weight ratio of 1:3 reached 4.4% with a short circuit current density (Jsc) of 10.2 mA/cm2, an open circuit voltage (Voc) of 0.81 V, and a fill factor (FF) of 0.53 under air mass (AM) 1.5 G (100 mW/cm2). The preliminary data of the tandem cell with indium tin oxide (ITO) glass/PEDOT:PSS/P2:PC71BM/TiOx/PEDOT:PSS/P3HT:PC71BM/TiOx/Al configuration has reached Jsc of 6.2 mA/cm2, Voc of 1.33 V, FF of 0.56 and an overall efficiency of 4.6% under AM 1.5 G (100 mW/cm2).


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