Nanoporous Silicon Thin Film-Based Hydrogen Sensor Using Metal-Assisted Chemical Etching with Annealed Palladium Nanoparticles

We investigate the energy band structure of nanoporous silicon thin film using first principles calculation based on density functional theory (DFT) with the generalized gradient approximation (GGA). The calculation results show that the band gaps of nanoporous silicon increase with increasing porosity, increase with decreasing the thickness of matrix layer, and almost independent of the thickness of pore layer. Moreover, the band structure of nanoporous silicon can be transformed from indirect to direct gap on thin films of (111) and (110) faces. It will be the guidance and reference for the fabrication of porous silicon optoelectronic devices.

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Light trapping enhancement induced by bimetallic non-alloyed nanoparticles on a disordered subwavelength flexible thin film crystalline silicon substrate using metal-assisted chemical etching

Optics Letters ◽

10.1364/ol.42.000431 ◽

2017 ◽

Vol 42 (3) ◽

pp. 431 ◽

Cited By ~ 5

Author(s):

Soo Kyung Lee ◽

Chee Leong Tan ◽

Yong Tak Lee

Keyword(s):

Thin Film ◽

Silicon Substrate ◽

Chemical Etching ◽

Crystalline Silicon ◽

Light Trapping ◽

Metal Assisted Chemical Etching

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Fabrication of a room temperature hydrogen sensor based on thin film of single-walled carbon nanotubes doped with palladium nanoparticles

Journal of Experimental Nanoscience ◽

10.1080/17458080.2011.602368 ◽

2013 ◽

Vol 8 (5) ◽

pp. 717-730 ◽

Cited By ~ 6

Author(s):

Afsaneh Safavi ◽

Norooz Maleki ◽

Mohammad Mahdi Doroodmand

Keyword(s):

Thin Film ◽

Carbon Nanotubes ◽

Palladium Nanoparticles ◽

Room Temperature ◽

Single Walled Carbon Nanotubes ◽

Hydrogen Sensor ◽

Single Walled Carbon ◽

Walled Carbon Nanotubes

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The relaxation of compressive biaxial strains in SOS via microtwins

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100155013 ◽

1989 ◽

Vol 47 ◽

pp. 608-609

Author(s):

M. E. Twigg ◽

E. D. Richmond ◽

J. G. Pellegrino

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Compressive Stress ◽

Vapor Deposition ◽

Partial Dislocation ◽

Molecular Beam ◽

Volume Fraction ◽

Chemical Vapor ◽

Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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