Nanoporous Silicon Thin Film-Based Hydrogen Sensor Using Metal-Assisted Chemical Etching with Annealed Palladium Nanoparticles

2020 ◽  
Vol 12 (39) ◽  
pp. 43614-43623 ◽  
Author(s):  
Hyeonggyun Kim ◽  
Jeonghoon Yun ◽  
Min Gao ◽  
Hyeok Kim ◽  
Minkyu Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Palladium Nanoparticles ◽  
Chemical Etching ◽  
Hydrogen Sensor ◽  
Silicon Thin Film ◽  
Nanoporous Silicon ◽  
Metal Assisted Chemical Etching

Fabrication of Silicon thin film by metal-assisted chemical etching

2014 ◽  
Author(s):  
Song-Ting Yang ◽  
Chien-Ting Liu ◽  
Subramani Thiyagu ◽  
Chen-Chih Hsueh ◽  
Ching-Fuh Lin
Keyword(s):  
Thin Film ◽  
Chemical Etching ◽  
Silicon Thin Film ◽  
Metal Assisted Chemical Etching

Silicon nanowires with controlled sidewall profile and roughness fabricated by thin-film dewetting and metal-assisted chemical etching

2013 ◽  
Vol 24 (22) ◽  
pp. 225305 ◽  
Author(s):  
B P Azeredo ◽  
J Sadhu ◽  
J Ma ◽  
K Jacobs ◽  
J Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Metal Assisted Chemical Etching

STUDY ON BAND STRUCTURE OF NANOPOROUS SILICON THIN FILM

2018 ◽  
Vol 25 (01) ◽  
pp. 1850045
Author(s):  
XUEKE WU ◽  
YANLIN TANG
Keyword(s):  
Thin Film ◽  
Band Structure ◽  
Density Functional ◽  
First Principles Calculation ◽  
Generalized Gradient ◽  
Silicon Thin Film ◽  
Functional Theory ◽  
Nanoporous Silicon ◽  
Matrix Layer ◽  
Calculation Results

We investigate the energy band structure of nanoporous silicon thin film using first principles calculation based on density functional theory (DFT) with the generalized gradient approximation (GGA). The calculation results show that the band gaps of nanoporous silicon increase with increasing porosity, increase with decreasing the thickness of matrix layer, and almost independent of the thickness of pore layer. Moreover, the band structure of nanoporous silicon can be transformed from indirect to direct gap on thin films of (111) and (110) faces. It will be the guidance and reference for the fabrication of porous silicon optoelectronic devices.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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