Spin-filtering and tunneling magnetoresistance effects in 6,6,12-graphyne-based molecular magnetic tunnel junctions

By designing two kinds of molecular magnetic tunnel junctions based on 6,6,12-graphyne and zigzag graphene nanoribbons, the spin-filtering and tunneling magnetoresistance effects of spintronic devices can be dramatically enhanced.

Download Full-text

THE IMPORTANCE OF Fe SURFACE STATES FOR MAGNETIC TUNNEL JUNCTION BASED SPINTRONIC DEVICES

Modern Physics Letters B ◽

10.1142/s0217984908017060 ◽

2008 ◽

Vol 22 (26) ◽

pp. 2529-2551 ◽

Cited By ~ 6

Author(s):

ATHANASIOS N. CHANTIS ◽

KIRILL D. BELASHCHENKO ◽

EVGENY Y. TSYMBAL ◽

INNA V. SUS

Keyword(s):

Spin Polarization ◽

Tunnel Junctions ◽

Strong Dependence ◽

Magnetic Tunnel Junctions ◽

Interface States ◽

Tunneling Magnetoresistance ◽

Sign Reversal ◽

Spintronic Devices ◽

Spin Electronics ◽

Minority Spin

In this article we give a review of our recent theoretical studies of the influence of Fe (001) surface (interface) states on spin-polarized electron transport across magnetic tunnel junctions with Fe electrodes. We show that minority-spin surface (interface) states are responsible for at least two effects which are important for spin electronics. First, they can produce a sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, tunneling magnetoresistance junctions with a single ferromagnetic electrode. Second, in Fe/GaAs (001) magnetic tunnel junctions minority-spin interface states produce a strong dependence of the tunneling current spin polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is predicted. This explains the observed sign reversal of spin polarization in recent experiments of electrical spin injection in Fe/GaAs (001) and related reversal of tunneling magnetoresistance through vertical Fe/GaAs/Fe trilayers.

Download Full-text

Significant tunneling magnetoresistance and excellent spin filtering effect in CrI3-based van der Waals magnetic tunnel junctions

Physical Chemistry Chemical Physics ◽

10.1039/d0cp02534h ◽

2020 ◽

Vol 22 (26) ◽

pp. 14773-14780 ◽

Cited By ~ 1

Author(s):

Zhi Yan ◽

Ruiqiang Zhang ◽

Xinlong Dong ◽

Shifei Qi ◽

Xiaohong Xu

Keyword(s):

Transport Properties ◽

Negative Differential Resistance ◽

Tunnel Junctions ◽

Van Der Waals ◽

Magnetic Tunnel Junctions ◽

Differential Resistance ◽

Tunneling Magnetoresistance ◽

Positive Bias ◽

Filtering Effect ◽

Spin Filtering

The transport properties of CrI3/h-BN/n·CrI3 (n = 1, 2, 3, 4) MTJs under positive bias voltages exhibit an interesting odd-even effect. Significant tunneling magnetoresistance, a perfect spin filtering effect and remarkable negative differential resistance were obtained.

Download Full-text

Surface acoustic wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions

Journal of Applied Physics ◽

10.1063/5.0051905 ◽

2021 ◽

Vol 130 (3) ◽

pp. 033901

Author(s):

Dhritiman Bhattacharya ◽

Peng Sheng ◽

Md Ahsanul Abeed ◽

Zhengyang Zhao ◽

Hongshi Li ◽

...

Keyword(s):

Acoustic Wave ◽

Surface Acoustic Wave ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Wave Induced

Download Full-text

MAGNETORESISTANCE IN Fe/MgO/Fe MAGNETIC TUNNEL JUNCTIONS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156407004795 ◽

2007 ◽

Vol 17 (03) ◽

pp. 593-598 ◽

Cited By ~ 1

Author(s):

N. N. BELETSKII ◽

S. A. BORYSENKO ◽

V. M. YAKOVENKO ◽

G. P. BERMAN ◽

S. A. WOLF

Keyword(s):

Current Density ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Electron Current ◽

Ferromagnetic Electrode ◽

Electron Current Density

The magnetoresistance of Fe/MgO/Fe magnetic tunnel junctions (MTJs) was studied taking into consideration image forces. For MTJs with an MgO insulator, explanations are given of the giant tunneling magnetoresistance (TMR) effect and the effect of the increasing TMR with an increase in MgO insulator thickness. It is demonstrated that the electron current density through MTJs can be high enough to switch the magnetization of a ferromagnetic electrode.

Download Full-text

Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin filtering effects and high tunnel magnetoresistance via energy band difference

Semiconductor Science and Technology ◽

10.1088/1361-6641/ac3639 ◽

2021 ◽

Author(s):

Li Liu ◽

Shizhuo Ye ◽

Jin He ◽

Qijun Huang ◽

Hao Wang ◽

...

Keyword(s):

Bias Voltage ◽

Tunnel Junctions ◽

Van Der Waals ◽

Magnetic Tunnel Junctions ◽

Differential Resistance ◽

High Tunnel ◽

Voltage Range ◽

Negative Differential Resistance Effect ◽

Magnetoresistance Ratio ◽

Spin Filtering

Abstract Recently, the study on two-dimensional materials expands to the field of spintronics. The intrinsically ferromagnetic van der Waals materials such as CrI3 and CrBr3 receive much attention due to nearly 100% spin polarization and good stability, resulting in excellent performance in magnetic tunnel junctions. In this work, we design the magnetic tunnel junctions of Cu/CrI3/Cu and Cu/CrBr3/Cu with the electrodes of Cu(111) and the tunneling barrier of 4-monolayer CrI3 or CrBr3. Our first-principle calculations combined with nonequilibrium Green’s function method indicate that the CrBr3-based MTJ has a larger maximum tunneling magnetoresistance ratio than the CrI3-based MTJ. In a wide bias voltage range, the CrI3-based MTJ can maintain high spin filtering performance, while that of the CrBr3-based MTJ degrades sharply as the bias voltage increases. It is noted that negative differential resistance effect is observed in the CrBr3-based MTJ. The differences of spin transport properties between the CrI3-based MTJ and the CrBr3-based MTJ are clarified in terms of the inside device physics, including the spin-dependent projected density of states, band structures, Bloch states, and the electron density difference. This work provides some physical insights for the design of 2D van der Waals MTJ.

Download Full-text