Efficient and Stable Blue Perovskite Light-Emitting Devices Based on Inorganic Cs4PbBr6 Spaced Low-Dimensional CsPbBr3 through Synergistic Control of Amino Alcohols and Polymer Additives

With the rise of nanoscience and nanotechnologies, especially the continuous deepening of research on low-dimensional materials and structures, various kinds of light-emitting devices based on nanometer-structured materials are gradually becoming the natural candidates for the next generation of advanced optoelectronic devices with improved performance through engineering their interface/surface properties. As dimensions of light-emitting devices are scaled down to the nanoscale, the plentitude of their surface/interface properties is one of the key factors for their dominating device performance. In this paper, firstly, the generation, classification, and influence of surface/interface states on nanometer optical devices will be given theoretically. Secondly, the relationship between the surface/interface properties and light-emitting diode device performance will be investigated, and the related physical mechanisms will be revealed by introducing classic examples. Especially, how to improve the performance of light-emitting diodes by using factors such as the surface/interface purification, quantum dots (QDs)-emitting layer, surface ligands, optimization of device architecture, and so on will be summarized. Finally, we explore the main influencing actors of research breakthroughs related to the surface/interface properties on the current and future applications for nanostructured light-emitting devices.

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Some Unconventional Organic−Inorganic Hybrid Low-Dimensional Semiconductors and Related Light-Emitting Devices

The Journal of Physical Chemistry C ◽

10.1021/jp111881b ◽

2011 ◽

Vol 115 (17) ◽

pp. 8475-8483 ◽

Cited By ~ 59

Author(s):

I. Koutselas ◽

P. Bampoulis ◽

E. Maratou ◽

T. Evagelinou ◽

G. Pagona ◽

...

Keyword(s):

Inorganic Hybrid ◽

Light Emitting ◽

Light Emitting Devices ◽

Low Dimensional

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Light-Emitting Devices – Luminescence from Low-Dimensional Nanostructures

Advances in Optical Communication ◽

10.5772/59103 ◽

2014 ◽

Author(s):

S. Hadi Mousavi ◽

Sima Alsadat Jafari Mohammadi ◽

Hamid Haratizadeh ◽

Peter W. de Oliveira

Keyword(s):

Light Emitting ◽

Light Emitting Devices ◽

Low Dimensional

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Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices

Nature Communications ◽

10.1038/s41467-020-18380-1 ◽

2020 ◽

Vol 11 (1) ◽

Author(s):

Chang Yi ◽

Chao Liu ◽

Kaichuan Wen ◽

Xiao-Ke Liu ◽

Hao Zhang ◽

...

Keyword(s):

Low Temperature ◽

Formation Energy ◽

High Efficiency ◽

Intermediate Phase ◽

Light Emitting Diode ◽

Red Light ◽

Light Emitting ◽

Light Emitting Devices ◽

Device Applications ◽

Low Dimensional

Abstract Black phase CsPbI3 is attractive for optoelectronic devices, while usually it has a high formation energy and requires an annealing temperature of above 300 °C. The formation energy can be significantly reduced by adding HI in the precursor. However, the resulting films are not suitable for light-emitting applications due to the high trap densities and low photoluminescence quantum efficiencies, and the low temperature formation mechanism is not well understood yet. Here, we demonstrate a general approach for deposition of γ-CsPbI3 films at 100 °C with high photoluminescence quantum efficiencies by adding organic ammonium cations, and the resulting light-emitting diode exhibits an external quantum efficiency of 10.4% with suppressed efficiency roll-off. We reveal that the low-temperature crystallization process is due to the formation of low-dimensional intermediate states, and followed by interionic exchange. This work provides perspectives to tune phase transition pathway at low temperature for CsPbI3 device applications.

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