A Study on the Growth Behavior and Stability of Molecular Layer Deposited Alucone Films Using Diethylene Glycol and Trimethyl Aluminum Precursors, and the Enhancement of Diffusion Barrier Properties by Atomic Layer Deposited Al2O3 Capping

2016 ◽  
Vol 8 (19) ◽  
pp. 12263-12271 ◽  
Author(s):  
Dong-won Choi ◽  
Mi Yoo ◽  
Hyuck Mo Lee ◽  
Jozeph Park ◽  
Hyun You Kim ◽  
...  
Keyword(s):  
Diethylene Glycol ◽  
Diffusion Barrier ◽  
Molecular Layer ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Growth Behavior ◽  
Trimethyl Aluminum ◽  
Aluminum Precursors

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

Diffusion Barrier Properties of Atomic Layer Deposited Ultrathin Ta[sub 2]O[sub 5] and TiO[sub 2] Films

2006 ◽  
Vol 153 (4) ◽  
pp. G304 ◽  
Author(s):  
Petra Alén ◽  
Marko Vehkamäki ◽  
Mikko Ritala ◽  
Markku Leskelä
Keyword(s):  
Diffusion Barrier ◽  
Atomic Layer ◽  
Barrier Properties

Diffusion barrier properties of atomic layer deposited iridium thin films on the Cu/Ir/Si structure

2010 ◽  
Author(s):  
Yong Hwan Lim ◽  
Hana Yoo ◽  
Bum Ho Choi ◽  
Jong Ho Lee ◽  
Ho-Nyun Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Barrier Properties

Fabrication of Organic Thin Films for Copper Diffusion Barrier Layers Using Molecular Layer Deposition

2010 ◽  
Vol 1249 ◽  
Author(s):  
Stacey Bent ◽  
Paul William Loscutoff ◽  
Scott Clendenning
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Molecular Layer ◽  
Organic Thin Films ◽  
Barrier Properties ◽  
Diffusion Barriers ◽  
Molecular Layer Deposition ◽  
Copper Diffusion ◽  
Barrier Layers ◽  
Layer Deposition

AbstractDevice scaling predicts that copper barrier layers of under 3 nm in thickness will soon be needed in back-end processing for integrated circuits, motivating the development of new barrier layer materials. In this work, nanoscale organic thin films for use as possible copper diffusion barrier layers are deposited by molecular layer deposition (MLD) utilizing a series of self-limiting reactions of organic molecules. MLD can be used to tailor film properties to optimize desirable barrier properties, including density, copper surface adhesion, thermal stability, and low copper diffusion. Three systems are examined as copper diffusion barriers, a polyurea film deposited by the reaction of 1,4-phenylene diisocyanate (PDIC) and ethylenediamine (ED), a polyurea film with a sulfide-modified backbone, and a polythiourea films using a modified coupling chemistry. Following deposition of the MLD films, copper is sputter deposited. The copper diffusion barrier properties of the film are tested through adhesion and annealing tests, including 4-point bend testing and TEM imaging to examine the level of copper penetration. The promise and challenges of MLD-formed organic copper diffusion barriers will be discussed.

Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

2011 ◽  
Vol 11 (1) ◽  
pp. 671-674 ◽  
Author(s):  
Seong-Jun Jeong ◽  
Doo-In Kim ◽  
Sang Ouk Kim ◽  
Tae Hee Han ◽  
Jung-Dae Kwon ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Diffusion Barrier ◽  
Oxygen Diffusion ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Layer Deposition

Diffusion barrier properties of atomic-layer-deposited iridium thin films on Cu/Ir/Si structures

2012 ◽  
Vol 60 (10) ◽  
pp. 1521-1525
Author(s):  
Sang In Song ◽  
Bum Ho Choi ◽  
Jong Ho Lee ◽  
Hong Kee Lee
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Barrier Properties

Effect of interface layer on growth behavior of atomic-layer-deposited Ir thin film as novel Cu diffusion barrier

2011 ◽  
Vol 257 (22) ◽  
pp. 9654-9660 ◽  
Author(s):  
Bum Ho Choi ◽  
Jong Ho Lee ◽  
Hong Kee Lee ◽  
Joo Hyung Kim
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Interface Layer ◽  
Growth Behavior ◽  
Cu Diffusion Barrier

The growth and diffusion barrier properties of atomic layer deposited NbNx thin films

2005 ◽  
Vol 491 (1-2) ◽  
pp. 235-241 ◽  
Author(s):  
Petra Alén ◽  
Mikko Ritala ◽  
Kai Arstila ◽  
Juhani Keinonen ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Barrier Properties ◽  
And Diffusion

Deposition and Characteristics of Tantalum Nitride films by Plasma Assisted Atomic Layer Deposition as Cu Diffusion Barrier

2003 ◽  
Vol 766 ◽  
Author(s):  
Kyoung-Il Na ◽  
Se-Jong Park ◽  
Woo-Cheol Jeong ◽  
Se-Hoon Kim ◽  
Sung-Eun Boo ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Oxygen ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Layer Deposition ◽  
Cu Diffusion Barrier ◽  
The Stability ◽  
Oxygen Impurities

AbstractFor a diffusion barrier against Cu, tantalum nitride (TaN) films have been successfully deposited by both conventional thermal atomic layer deposition (ALD) and plasma assisted atomic layer deposition (PAALD), using pentakis (ethylmethlyamino) tantalum (PEMAT) and ammonia (NH3) as precursors. The growth rate of PAALD TaN at substrate temperature 250° was slightly higher than that of ALD TaN (0.80 Å/cycle for PAALD and 0.75 Å/cycle for ALD). Density of TaN films deposited by PAALD was as high as 11.0 g/cm3, considerably higher compared to the value of 8.3 g/cm3 obtained by ALD. The N: Ta ratio for ALD TaN was 44: 37 in composition and the film contained approximately 8∼10 atomic % carbon and 11 atomic % oxygen impurities. On the other hand, the ratio for PAALD TaN layers was 47: 44 and the respective carbon and oxygen contents of TaN layers decreased to 3 atomic % and 4 atomic %. The stability of 10 nm-thick TaN films as a Cu diffusion barrier was tested through thermal annealing for 30 minutes in N2 ambient and characterized by XRD, which proves the PAALD deposited TaN film to maintain better barrier properties against Cu below 800°.

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