Using Dopants to Tune Oxygen Vacancy Formation in Transition Metal Oxide Resistive Memory

2017 ◽  
Vol 9 (19) ◽  
pp. 16296-16304 ◽  
Author(s):  
Hao Jiang ◽  
Derek A. Stewart
2013 ◽  
Vol 34 (2) ◽  
pp. 244-246 ◽  
Author(s):  
Jung-Kyu Lee ◽  
Sunghun Jung ◽  
Byeong-In Choe ◽  
Jinwon Park ◽  
Sung-Woong Chung ◽  
...  

Author(s):  
Bangmin Zhang ◽  
Lijun Wu ◽  
Xin Feng ◽  
Dongyang Wang ◽  
Xiao Chi ◽  
...  

The charge-density-wave correlates with properties in transition metal oxide, and regulating this state is important to explore the potential of oxide. Defect could modulate local environment, of which the effect...


Author(s):  
Siyao Cheng ◽  
Aming Xie ◽  
Xihao Pan ◽  
Kexin Zhang ◽  
Cheng Zhang ◽  
...  

Endowing transition metal oxide (TMO) with oxygen vacancy is an efficient strategy to tune its electronic structure and electric property. In this work, we put forward an exquisite VO2-NaBH4 grinding...


2018 ◽  
Vol 20 (17) ◽  
pp. 11912-11929 ◽  
Author(s):  
Dong Tian ◽  
Kongzhai Li ◽  
Yonggang Wei ◽  
Xing Zhu ◽  
Chunhua Zeng ◽  
...  

The effects of transition metal (Fe, Co and Ni) modification (adsorption, insertion and substitution) of CeO2 surfaces on oxygen vacancy formation and CH4 activation are studied on the basis of first principles calculations.


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