Using Dopants to Tune Oxygen Vacancy Formation in Transition Metal Oxide Resistive Memory
2017 ◽
Vol 9
(19)
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pp. 16296-16304
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2013 ◽
Vol 34
(2)
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pp. 244-246
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Keyword(s):
2017 ◽
Vol 416
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pp. 547-564
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2016 ◽
Vol 521
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pp. 240-249
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Keyword(s):
Keyword(s):
2014 ◽
Vol 20
(S3)
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pp. 556-557
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2018 ◽
Vol 20
(17)
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pp. 11912-11929
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Keyword(s):
2020 ◽
Vol 124
(50)
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pp. 27621-27630