High-Performance Quantum Dot Light-Emitting Diodes Based on Al-Doped ZnO Nanoparticles Electron Transport Layer

2018 ◽  
Vol 10 (22) ◽  
pp. 18902-18909 ◽  
Author(s):  
Yizhe Sun ◽  
Weigao Wang ◽  
Heng Zhang ◽  
Qiang Su ◽  
Jiangliu Wei ◽  
...  
2019 ◽  
Vol 75 ◽  
pp. 105411 ◽  
Author(s):  
Rashed Alsharafi ◽  
Yangbin Zhu ◽  
Fushan Li ◽  
Zhongwei Xu ◽  
Hailong Hu ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (76) ◽  
pp. 72462-72470 ◽  
Author(s):  
Jingling Li ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehui Xie ◽  
Dehua Xu ◽  
...  

In this work, all-solution processed, multi-layer yellow QLEDs, consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of ligand exchanged CuInS2/ZnS QDs, and electron transport layer of ZnO nanoparticles, are fabricated.


RSC Advances ◽  
2020 ◽  
Vol 10 (39) ◽  
pp. 23121-23127 ◽  
Author(s):  
Jun-hao Sun ◽  
Jia-hui Huang ◽  
Xu-yan Lan ◽  
Feng-chun Zhang ◽  
Ling-zhi Zhao ◽  
...  

Highly efficient blue quantum-dot light-emitting diodes have been realized by blending PEG into ZnO nanoparticles as an electron transport layer due to regulating charge balance and passivating the surface defect states of ZnO nanoparticles.


2021 ◽  
Vol MA2021-01 (23) ◽  
pp. 897-897
Author(s):  
Hyung Seok Choi ◽  
Yohan Kim ◽  
Jiyong Kim ◽  
André Geßner ◽  
Armin Wedel

2022 ◽  
Author(s):  
Nagarjuna Mude ◽  
Su Jeong Kim ◽  
Raju Lampande ◽  
Jang Hyuk Kwon

The efficiency and device lifetime of quantum dot light-emitting diodes (QLEDs) devices suffer due to charge unbalance issue resulting from excess electron injection from ZnO electron transport layer (ETL) to...


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