Grain Boundary Motion in Two-Dimensional Hexagonal Boron Nitride

ACS Nano ◽  
2020 ◽  
Vol 14 (10) ◽  
pp. 13512-13523
Author(s):  
Xibiao Ren ◽  
Chuanhong Jin
Nano Research ◽  
2014 ◽  
Vol 8 (4) ◽  
pp. 1357-1364 ◽  
Author(s):  
André Dankert ◽  
M. Venkata Kamalakar ◽  
Abdul Wajid ◽  
R. S. Patel ◽  
Saroj P. Dash

2011 ◽  
Vol 65 (2) ◽  
pp. 151-154 ◽  
Author(s):  
M. Velasco ◽  
H. Van Swygenhoven ◽  
C. Brandl

Nanoscale ◽  
2021 ◽  
Author(s):  
Yifei Li ◽  
Xin Wen ◽  
Changjie Tan ◽  
Ning Li ◽  
Ruijie Li ◽  
...  

Owing to its irreplaceable roles in new functional devices, such as universal substrates and excellent layered insulators, high-quality hexagonal BN (hBN) crystals are exceedingly required in the field of two-dimensional...


1990 ◽  
Vol 183 ◽  
Author(s):  
J. L. Batstone

AbstractMotion of ordered twin/matrix interfaces in films of silicon on sapphire occurs during high temperature annealing. This process is shown to be thermally activated and is analogous to grain boundary motion. Motion of amorphous/crystalline interfaces occurs during recrystallization of CoSi2 and NiSi2 from the amorphous phase. In-situ transmission electron microscopy has revealed details of the growth kinetics and interfacial roughness.


2020 ◽  
pp. 541-544
Author(s):  
J.L. Turner ◽  
M. Nakagawa ◽  
M.T. Lusk

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