Synthesis of centimeter-scale high-quality polycrystalline hexagonal boron nitride films from the Fe flux

Nanoscale ◽  
2021 ◽  
Author(s):  
Yifei Li ◽  
Xin Wen ◽  
Changjie Tan ◽  
Ning Li ◽  
Ruijie Li ◽  
...  

Owing to its irreplaceable roles in new functional devices, such as universal substrates and excellent layered insulators, high-quality hexagonal BN (hBN) crystals are exceedingly required in the field of two-dimensional...

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7303-7309 ◽  
Author(s):  
Peter Sutter ◽  
Jayeeta Lahiri ◽  
Peter Albrecht ◽  
Eli Sutter

RSC Advances ◽  
2019 ◽  
Vol 9 (18) ◽  
pp. 10155-10158 ◽  
Author(s):  
Zhiyuan Shi ◽  
Guangyuan Lu ◽  
Peng Yang ◽  
Tianru Wu ◽  
Weijun Yin ◽  
...  

CVD growth of large scale and high quality multilayer h-BN.


2020 ◽  
Vol 12 (25) ◽  
pp. 28351-28359 ◽  
Author(s):  
Biying Tan ◽  
Huihui Yang ◽  
Yunxia Hu ◽  
Feng Gao ◽  
Lifeng Wang ◽  
...  

Nanoscale ◽  
2018 ◽  
Vol 10 (34) ◽  
pp. 16243-16251 ◽  
Author(s):  
Jinjun Lin ◽  
Roland Yingjie Tay ◽  
Hongling Li ◽  
Lin Jing ◽  
Siu Hon Tsang ◽  
...  

Hexagonal boron nitride (h-BN) is an ideal substrate for two-dimensional (2D) materials because of its unique electrically insulating nature, atomic smoothness and low density of dangling bonds.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Hitesh Agarwal ◽  
Bernat Terrés ◽  
Lorenzo Orsini ◽  
Alberto Montanaro ◽  
Vito Sorianello ◽  
...  

AbstractElectro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This combination of materials allows for a high-quality modulator device with high performances: a ~39 GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high-speed modulators. This 2D-3D dielectric integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.


Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 222
Author(s):  
Pervaiz Ahmad ◽  
Mayeen Uddin Khandaker ◽  
Fida Rehman ◽  
Nawshad Muhammad ◽  
Mohammad Rashed Iqbal Faruque ◽  
...  

The interesting properties of hexagonal boron nitride (h-BN) and its potential uses in thermo-structural advanced applications have been limited or restricted by its inherent brittleness, which can easily be eliminated by its fibers (h-BN) in nanoscale dimensions. The current study is based on the synthesis of nanoscale 10B-enriched fibers of h-BN (10BNNFs) from 10B in the precursors instead of B in two-hour annealing at 900 °C and one-hour growth at 1000 °C. All of the 10BNNFs are randomly curved and highly condensed or filled from 10h-BN species with no internal space or crack. XRD peaks reported the 10h-BN phase and highly crystalline nature of the synthesized 10BNNFs. 10h-BN phase and crystalline nature of 10BNNFs are confirmed from high-intensity peaks at 1392 (cm−1) in Raman and FTIR spectroscopes.


Nano Research ◽  
2014 ◽  
Vol 8 (4) ◽  
pp. 1357-1364 ◽  
Author(s):  
André Dankert ◽  
M. Venkata Kamalakar ◽  
Abdul Wajid ◽  
R. S. Patel ◽  
Saroj P. Dash

2021 ◽  
Vol 13 (39) ◽  
pp. 47283-47292
Author(s):  
Yongliang Chen ◽  
Chi Li ◽  
Simon White ◽  
Milad Nonahal ◽  
Zai-Quan Xu ◽  
...  

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