Motion of Crystal/Crystal and Crystal/Amorphous Interfaces

1990 ◽  
Vol 183 ◽  
Author(s):  
J. L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Grain Boundary ◽  
Boundary Motion ◽  
High Temperature Annealing ◽  
Thermally Activated ◽  
Transmission Electron ◽  
Grain Boundary Motion

AbstractMotion of ordered twin/matrix interfaces in films of silicon on sapphire occurs during high temperature annealing. This process is shown to be thermally activated and is analogous to grain boundary motion. Motion of amorphous/crystalline interfaces occurs during recrystallization of CoSi2 and NiSi2 from the amorphous phase. In-situ transmission electron microscopy has revealed details of the growth kinetics and interfacial roughness.

In Situ High-Temperature Transmission Electron Microscopy Observations of the Formation of Nanocrystalline TiC from Nanocrystalline Anatase (TiO2)

1998 ◽  
Vol 4 (3) ◽  
pp. 269-277 ◽  
Author(s):  
A. Agrawal ◽  
J. Cizeron ◽  
V.L. Colvin
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Solid Phase ◽  
Anatase Phase ◽  
High Resolution Electron Microscopy ◽  
Rutile Phase ◽  
Transmission Electron ◽  
New Phase

In this work, the high-temperature behavior of nanocrystalline TiO2 is studied using in situ transmission electron microscopy (TEM). These nanoparticles are made using wet chemical techniques that generate the anatase phase of TiO2 with average grain sizes of 6 nm. X-ray diffraction studies of nanophase TiO2 indicate the material undergoes a solid-solid phase transformation to the stable rutile phase between 600° and 900°C. This phase transition is not observed in the TEM samples, which remain anatase up to temperatures as high as 1000°C. Above 1000°C, nanoparticles become mobile on the amorphous carbon grid and by 1300°C, all anatase diffraction is lost and larger (50 nm) single crystals of a new phase are present. This new phase is identified as TiC both from high-resolution electron microscopy after heat treatment and electron diffraction collected during in situ heating experiments. Video images of the particle motion in situ show the nanoparticles diffusing and interacting with the underlying grid material as the reaction from TiO2 to TiC proceeds.

scholarly journals Optimized High-Temperature In-Situ Transmission Electron Microscopy Double-Tilt Sample Heating Platform

2019 ◽  
Vol 25 (S2) ◽  
pp. 1540-1541
Author(s):  
Daan Hein Alsem ◽  
James Horwath ◽  
Julio Rodriguez-Manzo ◽  
Khim Karki ◽  
Eric Stach
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Sample Heating ◽  
Transmission Electron

scholarly journals High temperature irradiation induced creep in Ag nanopillars measured via in situ transmission electron microscopy

2018 ◽  
Vol 148 ◽  
pp. 1-4 ◽  
Author(s):  
Gowtham Sriram Jawaharram ◽  
Patrick M. Price ◽  
Christopher M. Barr ◽  
Khalid Hattar ◽  
Robert S. Averback ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Transmission Electron ◽  
Temperature Irradiation

Effect of Interface Native Oxide Layer on the Properties of Annealed Ni/SiC Contacts

2013 ◽  
Vol 740-742 ◽  
pp. 485-489 ◽  
Author(s):  
Wei Huang ◽  
Shao Hui Chang ◽  
Xue Chao Liu ◽  
Zheng Zheng Li ◽  
Tian Yu Zhou ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Oxide Layer ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
High Temperature Annealing ◽  
Contact Interface ◽  
Ohmic Behavior ◽  
Transmission Electron

The near-SiC-interfaces of annealed Ni/SiC contacts were observed directly by high-resolution transmission electron microscopy (HRTEM). 1 nm native oxide layer was observed in the as-deposited contact interface. The native oxide layer cannot be removed at 650°C through rapid thermal annealing (RTA) and it was completely removed at 1000°C RTA. The residue of native oxide layer resulted in the Schottky characters. High temperature annealing (>950°C) not only removes the oxide layer in the near-SiC-interface, but also forms a well arranged flat Ni2Si/SiC interface, which contribute to the formation of ohmic behavior.

Structure and Strength of Rapidly Quenched Cu-Al2O3 Composites

1998 ◽  
Vol 555 ◽  
Author(s):  
A. I. Il'Insky ◽  
A. S. Terletsky ◽  
E. W. Zozulya
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Strain Hardening ◽  
Vapor Condensation ◽  
High Temperature Annealing ◽  
X Ray ◽  
Transmission Electron ◽  
Three Stages ◽  
High Level

AbstractMicrostructure of dispersion hardened composites (DC) Cu-Al2O3 prepared by simultaneous vacuum vapor condensation of Cu and A12O3 was studied by X-ray diffractometry and transmission electron microscopy methods. After high temperature annealing at 900°C for 2 hours the composites retain the submicrocrystalline structure and high level of strength -0.9 GPa. It has been found that strain hardening of vacuum deposited Cu-A12O3 composites takes place in three stages that is not typical for well-known composites of metallurgical origin.

High-temperature in situ Cross-sectional Transmission Electron Microscopy Investigation of Crystallization Process of Yttrium-stabilized Zirconia/Si and Yttrium-stabilized Zirconia/SiOx/Si Thin Films

2005 ◽  
Vol 20 (7) ◽  
pp. 1878-1887 ◽  
Author(s):  
Takanori Kiguchi ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Crystallization Process ◽  
Stabilized Zirconia ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Tem Method

The crystallization process of yttria-stabilized zirconia (YSZ) gate dielectrics deposited on p-Si (001) and SiOx/p-Si(001) substrates and the growth process of SiOx has been investigated directly using high-temperature in situ cross-sectional view transmission electron microscopy (TEM) method and high-temperature plan-view in-situ TEM method. The YSZ layer is crystallized by the nucleation and growth mechanism at temperatures greater than 573 K. Nucleation originates from the film surface. Nucleation occurs randomly in the YSZ layer. Subsequently, the crystallized YSZ area strains the Si surface. Finally, it grows in the in-plane direction with the strain, whereas, if a SiOx layer of 1.4 nm exists, it absorbs the crystallization strain. Thereby, an ultrathin SiOx layer can relax the strain generated in the Si substrate in thin film crystallization process.

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