Neuromorphic Active Pixel Image Sensor Array for Visual Memory

ACS Nano ◽  
2021 ◽  
Vol 15 (9) ◽  
pp. 15362-15370
Author(s):  
Seongin Hong ◽  
Haewon Cho ◽  
Byung Ha Kang ◽  
Kyungho Park ◽  
Deji Akinwande ◽  
...  
2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Seongin Hong ◽  
Nicolò Zagni ◽  
Sooho Choo ◽  
Na Liu ◽  
Seungho Baek ◽  
...  

AbstractVarious large-area growth methods for two-dimensional transition metal dichalcogenides have been developed recently for future electronic and photonic applications. However, they have not yet been employed for synthesizing active pixel image sensors. Here, we report on an active pixel image sensor array with a bilayer MoS2 film prepared via a two-step large-area growth method. The active pixel of image sensor is composed of 2D MoS2 switching transistors and 2D MoS2 phototransistors. The maximum photoresponsivity (Rph) of the bilayer MoS2 phototransistors in an 8 × 8 active pixel image sensor array is statistically measured as high as 119.16 A W−1. With the aid of computational modeling, we find that the main mechanism for the high Rph of the bilayer MoS2 phototransistor is a photo-gating effect by the holes trapped at subgap states. The image-sensing characteristics of the bilayer MoS2 active pixel image sensor array are successfully investigated using light stencil projection.


2002 ◽  
Vol 38 (7) ◽  
pp. 317 ◽  
Author(s):  
T. Kwok ◽  
J.J. Zhong ◽  
T. Wilkinson ◽  
W.A. Crossland

2015 ◽  
Vol 36 (2) ◽  
pp. 242-248 ◽  
Author(s):  
汪波 WANG Bo ◽  
李豫东 LI Yu-dong ◽  
郭旗 GUO Qi ◽  
刘昌举 LIU Chang-ju ◽  
文林 WEN Lin ◽  
...  

1995 ◽  
Vol 42 (9) ◽  
pp. 1693-1694 ◽  
Author(s):  
J. Nakamura ◽  
S.E. Kemeny ◽  
E.R. Fossum

2019 ◽  
Vol 50 (1) ◽  
pp. 1004-1006 ◽  
Author(s):  
Bozhi Liu ◽  
Xiaoqi Shi ◽  
Shoujin Cai ◽  
Xuanxian Cai ◽  
Xuexin Lan ◽  
...  

1999 ◽  
Vol 5 (S2) ◽  
pp. 370-371
Author(s):  
H. Yurimoto ◽  
K. Nagashima ◽  
T. Kunihiro ◽  
I. Takayanagi ◽  
J. Nakamura ◽  
...  

A stacked CMOS active pixel image-sensor (APS) has been developed for detecting various kinds of charged particles and its noise performance has been measured and analyzed. The sensitivity for ions and electrons with keV energy level utilizes for ion microscopy such-as SIMS and electron microscopy, respectively.Charge particles such as ions and electrons with kinetic energy of keV order are useful probes for surface analysis of material. A measurement system which yields two-dimensional image of charge particles is highly demanded. The conventional two-dimensional detection system is composed of a micro channel plate, a florescent plate which receives multiplied secondary electrons and generates a visible image, and a visible image sensor. However, its limited dynamic range and non-linearity in the ion-electron-to-photon conversion process make a quantitative measurement difficult. The proposed system using a stacked CMOS APS has several advantages over the conventional system such as high spatial resolution, no insensitive time, high S/N, wide dynamic range, nondestructive readout capability, high robustness, and low power consumption.


2019 ◽  
Vol 50 (S1) ◽  
pp. 613-616
Author(s):  
An-Thung Cho ◽  
Zhen Liu ◽  
Kai-jun Liu ◽  
Feng-yun Yang ◽  
Qiong-hua Mo ◽  
...  

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