The Rate of Charge Tunneling in EGaIn Junctions Is Not Sensitive to Halogen Substituents at the Self-Assembled Monolayer//Ga2O3 Interface

ACS Nano ◽  
2018 ◽  
Vol 12 (10) ◽  
pp. 10221-10230 ◽  
Author(s):  
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Priscilla F. Pieters ◽  
Li Yuan ◽  
Darrell Collison ◽  
George M. Whitesides
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Zi-Long Wang ◽  
Ming-Xia Shi ◽  
Kai Sun ◽  
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...  

2000 ◽  
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Author(s):  
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Shaoyi Jiang ◽  
Tahir Çaǧın ◽  
Elaine S. Yamaguchi ◽  
Rawls Frazier ◽  
...  

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