scholarly journals Gate-Induced Metal–Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors

ACS Nano ◽  
2019 ◽  
Vol 13 (11) ◽  
pp. 13413-13420 ◽  
Author(s):  
Prasanna D. Patil ◽  
Sujoy Ghosh ◽  
Milinda Wasala ◽  
Sidong Lei ◽  
Robert Vajtai ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Indium Selenide ◽  
Insulator Transition ◽  
Copper Indium Selenide ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Copper Indium

scholarly journals Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11)

Electronics ◽  
2019 ◽  
Vol 8 (6) ◽  
pp. 645 ◽  
Author(s):  
Prasanna D. Patil ◽  
Sujoy Ghosh ◽  
Milinda Wasala ◽  
Sidong Lei ◽  
Robert Vajtai ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Low Power ◽  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Indium Selenide ◽  
Copper Indium Selenide ◽  
Two Dimensional ◽  
Copper Indium

Innovations in the design of field-effect transistor (FET) devices will be the key to future application development related to ultrathin and low-power device technologies. In order to boost the current semiconductor device industry, new device architectures based on novel materials and system need to be envisioned. Here we report the fabrication of electric double layer field-effect transistors (EDL-FET) with two-dimensional (2D) layers of copper indium selenide (CuIn7Se11) as the channel material and an ionic liquid electrolyte (1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)) as the gate terminal. We found one order of magnitude improvement in the on-off ratio, a five- to six-times increase in the field-effect mobility, and two orders of magnitude in the improvement in the subthreshold swing for ionic liquid gated devices as compared to silicon dioxide (SiO2) back gates. We also show that the performance of EDL-FETs can be enhanced by operating them under dual (top and back) gate conditions. Our investigations suggest that the performance of CuIn7Se11 FETs can be significantly improved when BMIM-PF6 is used as a top gate material (in both single and dual gate geometry) instead of the conventional dielectric layer of the SiO2 gate. These investigations show the potential of 2D material-based EDL-FETs in developing active components of future electronics needed for low-power applications.

scholarly journals Reply to “Comment on ‘Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors’”

ACS Nano ◽  
2019 ◽  
Vol 13 (8) ◽  
pp. 8498-8500
Author(s):  
Michael Randle ◽  
Alexey Lipatov ◽  
Avinash Kumar ◽  
Peter A. Dowben ◽  
Alexander Sinitskii ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors

ACS Nano ◽  
2018 ◽  
Vol 13 (1) ◽  
pp. 803-811 ◽  
Author(s):  
Michael Randle ◽  
Alexey Lipatov ◽  
Avinash Kumar ◽  
Chun-Pui Kwan ◽  
Jubin Nathawat ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Low-Temperature 2D/2D Ohmic Contacts in WSe2 Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition

2021 ◽  
Vol 13 (8) ◽  
pp. 10594-10602
Author(s):  
Lily J. Stanley ◽  
Hsun-Jen Chuang ◽  
Zhixian Zhou ◽  
Michael R. Koehler ◽  
Jiaqiang Yan ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Comment on “Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors”

ACS Nano ◽  
2019 ◽  
Vol 13 (8) ◽  
pp. 8495-8497 ◽  
Author(s):  
Irina G. Gorlova ◽  
Vadim Ya. Pokrovskii ◽  
Aleksei V. Frolov ◽  
Andrey P. Orlov
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors

2006 ◽  
Vol 103 (32) ◽  
pp. 11834-11837 ◽  
Author(s):  
A. S. Dhoot ◽  
J. D. Yuen ◽  
M. Heeney ◽  
I. McCulloch ◽  
D. Moses ◽  
...  
Keyword(s):  
Polymer Electrolyte ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator
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