Point-of-Care Analysis of Blood Ammonia with a Gas-Phase Sensor

ACS Sensors ◽  
2020 ◽  
Vol 5 (8) ◽  
pp. 2415-2421
Author(s):  
Thomas R. Veltman ◽  
Chun J. Tsai ◽  
Natalia Gomez-Ospina ◽  
Matthew W. Kanan ◽  
Gilbert Chu
2019 ◽  
Vol 278 ◽  
pp. 1-7 ◽  
Author(s):  
Xidong Hao ◽  
Danjing Wu ◽  
Yipei Wang ◽  
Jinhua Ouyang ◽  
Jing Wang ◽  
...  

2018 ◽  
Vol 30 (8) ◽  
pp. 1610-1615 ◽  
Author(s):  
Joanna Zajda ◽  
Nicholas J. Schmidt ◽  
Zheng Zheng ◽  
Xuewei Wang ◽  
Mark E. Meyerhoff
Keyword(s):  

2020 ◽  
Vol 302 ◽  
pp. 127206 ◽  
Author(s):  
Xidong Hao ◽  
Tong Liu ◽  
Weijia Li ◽  
Yuxi Zhang ◽  
Jinhua Ouyang ◽  
...  

2008 ◽  
Vol 37 (2) ◽  
pp. 198-206 ◽  
Author(s):  
Robert Goggs ◽  
Sergio Serrano ◽  
Balazs Szladovits ◽  
Iain Keir ◽  
Ryan Ong ◽  
...  

2002 ◽  
Vol 751 ◽  
Author(s):  
A. El Madi ◽  
B. Meulendyk ◽  
R. S. Pilling ◽  
G. Bernhardt ◽  
R. J. Lad ◽  
...  

ABSTRACTSemiconducting metal oxide (SMO) chemiresistive sensors are highly sensitive toward a broad range of hydrocarbons. To develop a gas phase sensor with selectivity toward organophosphorus compounds, such as chemical warfare agents and pesticides, we have developed dosimeters based upon a poisoning mechanism. Here, we report the growth and characterization of WO3 thin films, modified with Cu2O. XPS data show that exposure to phosphonate compounds leads to accumulation of phosphate on the surface, together with dramatic changes in the surface segregation of copper. We present XRD and XPS results to characterize the phase changes following growth, annealing, and exposure to phosphonate compounds. The correlation between sensor response and phosphorous accumulation shows that the highest activity occurs at intermediate coverages of Cu2O, in the15–25 Å range, on 500 Å WO3 films.


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