Transmission Electron Microscopy and High-Resolution Electron Microscopy Study of YNi2B2C Thin Film on Y2O3-Buffered MgO

2004 ◽  
Vol 16 (5) ◽  
pp. 842-845 ◽  
Author(s):  
G. H. Cao ◽  
P. Simon ◽  
U. Krämer ◽  
S. C. Wimbush ◽  
B. Holzapfel
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Transmission Electron ◽  
Resolution Electron

Transmission electron microscopy study of Co/Pd and Co/Au multilayers

1993 ◽  
Vol 8 (5) ◽  
pp. 1019-1027 ◽  
Author(s):  
F. Hakkens ◽  
A. De Veirman ◽  
W. Coene ◽  
Broeder F.J.A. den
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Columnar Structure ◽  
Electron Microscopy Study ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Resolution Electron

The structure of Co/Pd and Co/Au (111) multilayers is studied using transmission electron microscopy and high resolution electron microscopy. We focused on microstructure, atomic stacking (especially at the interfaces), and coherency, as these are structural properties that have considerable magnetic effects. A columnar structure with a strong curvature of the multilayer influenced by substrate temperature during growth is observed. High resolution imaging shows numerous steps at the interfaces of the multilayer structure and the presence of misfit dislocations. In bright-field images, periodic contrast fringes are observed at these interfaces as the result of moiré interference. These moiré fringes are used to study the misfit relaxation at the interfaces, whereas electron diffraction gives the average relaxation over the whole layer. Both measurements determined that, for Co/Pd as well as Co/Au multilayers, 80–85% of the misfit is relaxed and 20–15% remains in the form of strain, independent of the Co layer thickness in the regime studied.

Silicon-Sapphire Interface: A High Resolution Electron Microscopy Study

1980 ◽  
Vol 2 ◽  
Author(s):  
Fernando A. Ponce
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Silicon Layer ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Resolution Limit ◽  
High Concentration ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACTThe structure of the silicon-sapphire interface of CVD silicon on a (1102) sapphire substrate has been studied in crøss section by high resolution transmission electron microscopy. Multibeam images of the interface region have been obtained where both the silicon and sapphire lattices are directly resolved. The interface is observed to be planar and abrupt to the instrument resolution limit of 3 Å. No interfacial phase is evident. Defects are inhomogeneously distributed at the interface: relatively defect-free regions are observed in the silicon layer in addition to regions with high concentration of defects.

A transmission electron microscopy study of the crystallinity and secondary phase formation in melt-processed YBa2Cu3O7−δ

1996 ◽  
Vol 11 (12) ◽  
pp. 2990-2999 ◽  
Author(s):  
Y. Yan ◽  
D. A. Cardwell ◽  
A. M. Campbell ◽  
W. M. Stobbs
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Secondary Phase ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Secondary Phase Formation ◽  
Layer Stacking

The microstructure of large grain melt-processed YBa2Cu3O7−δ containing 10 molar% excess Y2BaCuO5 prepared and oxygenated under atmospheric pressure has been investigated by transmission electron microscopy (TEM) and optical microscopy. These materials always contain parallel structural and microscopic platelet-like features in the crystallographic a-b plane of a few microns spacing which have been variously described as grain boundaries or microcracks. We have observed such features, which clearly influence the flow of current in melt-processed YBCO, to consist of copper deficient, impurity phase material which can be either amorphous or crystalline in nature. A variety of defects have been observed by high-resolution electron microscopy (HREM) in the vicinity of these platelet boundaries, including double and triple CuO layer stacking faults, which may constitute effective flux pinning sites.

High-Resolution Transmission Electron Microscopy Study of WC-Co Alloy doped with other Metal Carbides; VC, Cr3C2, and ZrC

2007 ◽  
Vol 558-559 ◽  
pp. 993-996 ◽  
Author(s):  
Y. Yamanaka ◽  
T. Taniuchi ◽  
F. Shirase ◽  
T. Tanase ◽  
Yuichi Ikuhara ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Metal Carbides ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Interface Structures ◽  
Co Alloys

The WC/Co interface structures in WC-Co alloys doped with VC, Cr3C2 or ZrC were examined by high-resolution electron microscopy (HRTEM) and X-ray energy dispersive spectroscopy (EDS) with a special interest in the segregation behavior of respective dopants at the WC/Co interfaces. It was confirmed that the addition of VC or Cr3C2 were effective to reduce WC grain size while that of ZrC was not. In case of VC or Cr3C2-doped alloys, the morphology of WC grains largely changed comparing with undoped and ZrC-doped alloys. The WC/Co interfaces of the two alloys tend to form micro facets with (0001) and {1010} habits. EDS analysis with a sub-nano scale probe revealed that the dopants strongly segregated at the two habits. In contrast, such morphology change, and also dopant segregation, could not be observed in ZrC-doped alloy. In our study, doped ZrC was not found to solute in Co-phase. Doped ZrC distributed in Co-phase to form other grains mainly consisting of ZrC. The interface structures of WC/Co could be considered to be closely related to the inhibition effect to WC grain growth.

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