Atomic Layer Deposition of In2O3Using Cyclopentadienyl Indium:  A New Synthetic Route to Transparent Conducting Oxide Films

2006 ◽  
Vol 18 (15) ◽  
pp. 3571-3578 ◽  
Author(s):  
Jeffrey W. Elam ◽  
Alex B. F. Martinson ◽  
Michael J. Pellin ◽  
Joseph T. Hupp
2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.


2013 ◽  
Vol 31 (1) ◽  
pp. 01A120 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Joseph W. Roberts ◽  
Stuart J. C. Irvine ◽  
...  

2002 ◽  
Vol 92 (10) ◽  
pp. 5698-5703 ◽  
Author(s):  
Kaupo Kukli ◽  
Mikko Ritala ◽  
Jonas Sundqvist ◽  
Jaan Aarik ◽  
Jun Lu ◽  
...  

2013 ◽  
Vol 123 (5) ◽  
pp. 899-903 ◽  
Author(s):  
R. Ratajczak ◽  
A. Stonert ◽  
E. Guziewicz ◽  
S. Gierałtowska ◽  
T.A. Krajewski ◽  
...  

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