scholarly journals RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

2013 ◽  
Vol 123 (5) ◽  
pp. 899-903 ◽  
Author(s):  
R. Ratajczak ◽  
A. Stonert ◽  
E. Guziewicz ◽  
S. Gierałtowska ◽  
T.A. Krajewski ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Oxide Films ◽  
Atomic Layer ◽  
Zinc Oxide Films ◽  
Layer Deposition

Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Contactless Measurement ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Layer Deposition

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

Non-laminated growth of chlorine-doped zinc oxide films by atomic layer deposition at low temperatures

2015 ◽  
Vol 3 (32) ◽  
pp. 8336-8343 ◽  
Author(s):  
Yong-June Choi ◽  
Kyung-Mun Kang ◽  
Hong-Sub Lee ◽  
Hyung-Ho Park
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Deposition Temperature ◽  
Oxide Films ◽  
Atomic Layer ◽  
Zinc Oxide Films ◽  
Chlorine Doping ◽  
Layer Deposition ◽  
Low Deposition Temperature

Chlorine doping in a ZnO matrix to a concentration of 0.65 ± 0.05 at% was accomplished via atomic layer deposition using a home-made chlorine source at a low deposition temperature of 140 °C.

The uniformity of Al distribution in aluminum-doped zinc oxide films grown by atomic layer deposition

2011 ◽  
Vol 176 (3) ◽  
pp. 237-241 ◽  
Author(s):  
G. Luka ◽  
L. Wachnicki ◽  
B.S. Witkowski ◽  
T.A. Krajewski ◽  
R. Jakiela ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Oxide Films ◽  
Atomic Layer ◽  
Zinc Oxide Films ◽  
Layer Deposition ◽  
Aluminum Doped Zinc Oxide ◽  
Al Distribution

On the Characteristics of Zinc Oxide Films Grown on (11-20) Sapphire Substrates by Atomic Layer Deposition Using Diethylzinc and Nitrous Oxide

2019 ◽  
Vol 19 (2) ◽  
pp. 843-853 ◽  
Author(s):  
Kuo-Yi Yen ◽  
Kuang-Pi Liu ◽  
Yen-Ting Lin ◽  
Jyh-Rong Gong ◽  
Kuen-Yau Tsai ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Nitrous Oxide ◽  
Atomic Layer Deposition ◽  
Oxide Films ◽  
Atomic Layer ◽  
Sapphire Substrates ◽  
Zinc Oxide Films ◽  
Layer Deposition

Monocrystalline zinc oxide films grown by atomic layer deposition

2010 ◽  
Vol 518 (16) ◽  
pp. 4556-4559 ◽  
Author(s):  
Ł. Wachnicki ◽  
T. Krajewski ◽  
G. Łuka ◽  
B. Witkowski ◽  
B. Kowalski ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Oxide Films ◽  
Atomic Layer ◽  
Zinc Oxide Films ◽  
Layer Deposition

Analysis of scattering mechanisms in zinc oxide films grown by the atomic layer deposition technique

2015 ◽  
Vol 118 (3) ◽  
pp. 035706 ◽  
Author(s):  
Tomasz A. Krajewski ◽  
Krzysztof Dybko ◽  
Grzegorz Luka ◽  
Lukasz Wachnicki ◽  
Krzysztof Kopalko ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Oxide Films ◽  
Atomic Layer ◽  
Deposition Technique ◽  
Scattering Mechanisms ◽  
Zinc Oxide Films ◽  
Layer Deposition ◽  
Atomic Layer Deposition Technique
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