Thermal Stability of Perovskite-Based Monolithic Reactors in the Catalytic Combustion of Methane

Abstract Catalytic combustion of propane as typical light alkanes was important for the purification of industrial VOCs and automobile hydrocarbon emissions. Si-doped Al2O3 nanosheet was synthesized by a hydrothermal method, and effects of Si content on the morphology and thermal stability of Al2O3 were investigated. The doping of SiO2 could tune the thickness of Al2O3 nanosheets and significantly improve its thermal stability, the θ phase was still maintained and the specific surface area was as high as 56.3 m2∙g-1 after calcination at 1200 ℃. And then the Si-doped Al2O3 nanosheets were used as support of Pd catalysts (Pd/Si-Al2O3 nanosheets) for catalytic combustion of propane, especially Pd/3.6Si-Al2O3 nanosheets, which presented high activity, stability and resistance to sintering and H2O due to the promotion of Si on the thermal stability of Al2O3 and the stabilization (dispersion, isolation and strong interaction) of PdOx species.

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The preparation effect on activity and thermal stability of La0.8Ca0.2FeO3 perovskite honeycombs dispersed by MgAl2O4 spinel washcoat for catalytic combustion of dilute methane

Journal of Environmental Chemical Engineering ◽

10.1016/j.jece.2015.11.039 ◽

2016 ◽

Vol 4 (2) ◽

pp. 2187-2195 ◽

Cited By ~ 4

Author(s):

Huaiyou Li ◽

Ruifeng Fu ◽

Weijie Duan ◽

Zhidong Jiang

Keyword(s):

Thermal Stability ◽

Catalytic Combustion ◽

Mgal2o4 Spinel ◽

Thermal Stability Of

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The Ordered Phase Formation in Ti-Al-Ga Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069193 ◽

1970 ◽

Vol 28 ◽

pp. 440-441

Author(s):

Shiro Fujishiro ◽

Harold L. Gegel

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Titanium Alloys ◽

Growth Kinetics ◽

Stoichiometric Composition ◽

Good Potential ◽

Alpha Titanium ◽

Cold Rolled ◽

Kinetics Of ◽

Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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Microstructure studies of tungsten silicide schottky contacts on Gaas

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126445 ◽

1987 ◽

Vol 45 ◽

pp. 328-329

Author(s):

Yih-Cheng Shih ◽

E. L. Wilkie

Keyword(s):

Thermal Stability ◽

Field Effect Transistors ◽

Schottky Contact ◽

Schottky Contacts ◽

Excellent Thermal Stability ◽

Barrier Heights ◽

Gaas Substrates ◽

Film Adhesion ◽

Threshold Voltages ◽

Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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