Measurements of line strengths in the hydroperoxy .nu.1 overtone band at 1.5 .mu.m using an indium gallium arsenide phosphide laser

The Journal of Physical Chemistry ◽

10.1021/j100170a022 ◽

1991 ◽

Vol 95 (17) ◽

pp. 6499-6502 ◽

Author(s):

T. J. Johnson ◽

F. G. Wienhold ◽

J. P. Burrows ◽

G. W. Harris ◽

H. Burkhard

Keyword(s):

Gallium Arsenide ◽

Indium Gallium Arsenide ◽

Indium Gallium Arsenide Phosphide ◽

Overtone Band ◽

Gallium Arsenide Phosphide ◽

Indium Gallium ◽

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Guided-wave acousto-optic Bragg diffraction in indium gallium arsenide phosphide waveguides

Applied Physics Letters ◽

10.1063/1.119153 ◽

1997 ◽

Vol 70 (24) ◽

pp. 3185-3187 ◽

Author(s):

C. S. Tsai ◽

B. Sun ◽

A. Kar-Roy

Keyword(s):

Gallium Arsenide ◽

Indium Gallium Arsenide ◽

Guided Wave ◽

Bragg Diffraction ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

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ChemInform Abstract: MATERIAL-SELECTIVE CHEMICAL ETCHING IN THE SYSTEM INDIUM GALLIUM ARSENIDE PHOSPHIDE/INDIUM PHOSPHIDE (INGAASP/INP)

Chemischer Informationsdienst ◽

10.1002/chin.197920013 ◽

1979 ◽

Vol 10 (20) ◽

Author(s):

S. B. PHATAK ◽

G. KELNER

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Chemical Etching ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

Indium Gallium ◽

Selective Chemical ◽

Selective Chemical Etching

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Enhanced indium phosphide substrate protection for liquid phase epitaxy growth of indium‐gallium‐arsenide‐phosphide double heterostructure lasers

Journal of Applied Physics ◽

10.1063/1.332107 ◽

1983 ◽

Vol 54 (2) ◽

pp. 535-539 ◽

Author(s):

P. Besomi ◽

R. B. Wilson ◽

W. R. Wagner ◽

R. J. Nelson

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Indium Gallium Arsenide Phosphide ◽

Double Heterostructure ◽

Gallium Arsenide Phosphide ◽

Indium Gallium ◽

Substrate Protection

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The composition dependence of the microhardness anisotropy of indium gallium arsenide phosphide

Materials Letters ◽

10.1016/0167-577x(84)90110-1 ◽

1984 ◽

Vol 2 (5) ◽

pp. 355-358 ◽

Author(s):

D.Y. Watts ◽

A.F.W. Willoughby

Keyword(s):

Gallium Arsenide ◽

Indium Gallium Arsenide ◽

Composition Dependence ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

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Optical evaluation of indium gallium arsenide phosphide double‐heterostructure material for injection lasers

Journal of Applied Physics ◽

10.1063/1.331981 ◽

1983 ◽

Vol 54 (12) ◽

pp. 7114-7118 ◽

Author(s):

J. Degani ◽

P. Besomi ◽

D. P. Wilt ◽

R. J. Nelson ◽

R. B. Wilson

Keyword(s):

Gallium Arsenide ◽

Indium Gallium Arsenide ◽

Indium Gallium Arsenide Phosphide ◽

Double Heterostructure ◽

Gallium Arsenide Phosphide ◽

Indium Gallium ◽

Injection Lasers

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Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

Applied Physics Letters ◽

10.1063/1.91389 ◽

1980 ◽

Vol 36 (12) ◽

pp. 978-980 ◽

Author(s):

Ernesto H. Perea ◽

Emilio E. Mendez ◽

Clifton G. Fonstad

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

Indium Gallium ◽

Lattice Matched

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ChemInform Abstract: CHEMICAL ETCHING OF INDIUM GALLIUM ARSENIDE PHOSPHIDE/INDIUM PHOSPHIDE DH WAFER

Chemischer Informationsdienst ◽

10.1002/chin.198237350 ◽

1982 ◽

Vol 13 (37) ◽

Author(s):

S. ADACHI ◽

Y. NOGUCHI ◽

H. KAWAGUCHI

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Chemical Etching ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

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High quality indium gallium arsenide phosphide double heterostructure material grown by the near equilibrium liquid‐phase‐epitaxy technique

Journal of Applied Physics ◽

10.1063/1.333825 ◽

1984 ◽

Vol 56 (10) ◽

pp. 2879-2882 ◽

Author(s):

P. Besomi ◽

J. Degani ◽

N. K. Dutta ◽

W. R. Wagner ◽

R. J. Nelson

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Indium Gallium Arsenide Phosphide ◽

High Quality ◽

Double Heterostructure ◽

Gallium Arsenide Phosphide ◽

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ChemInform Abstract: GALLIUM CONTAMINATION OF INDIUM PHOSPHIDE EPITAXIAL LAYERS IN INDIUM PHOSPHIDE/INDIUM GALLIUM ARSENIDE PHOSPHIDE MULTILAYER STRUCTURES GROWN BY HYDRIDE TRANSPORT VAPOR PHASE EPITAXY

Chemischer Informationsdienst ◽

10.1002/chin.198538001 ◽

1985 ◽

Vol 16 (38) ◽

Author(s):

S. N. G. CHU ◽

F. A. STEVIE ◽

A. T. MACRANDER ◽

R. F. KARLICEK ◽

C. C. CHANG ◽

...

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Multilayer Structures ◽

Epitaxial Layers ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

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Heat treatment effects on indium gallium arsenide phosphide double heterostructure material

Journal of Applied Physics ◽

10.1063/1.333206 ◽

1984 ◽

Vol 55 (4) ◽

pp. 1135-1138 ◽

Author(s):

P. Besomi ◽

J. Degani ◽

R. B. Wilson

Keyword(s):

Heat Treatment ◽

Gallium Arsenide ◽

Indium Gallium Arsenide ◽

Treatment Effects ◽

Indium Gallium Arsenide Phosphide ◽

Double Heterostructure ◽

Gallium Arsenide Phosphide ◽

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